机译:通过射频溅射功率改善Au / Pt / Ti / p-GaAs欧姆接触中铂薄膜的残余应力
Iranian National Center for Laser Science and Technology, P.O. Box 14665-576, Tehran, Iran;
Iranian National Center for Laser Science and Technology, P.O. Box 14665-576, Tehran, Iran;
Iranian National Center for Laser Science and Technology, P.O. Box 14665-576, Tehran, Iran;
Iranian National Center for Laser Science and Technology, P.O. Box 14665-576, Tehran, Iran;
Iranian National Center for Laser Science and Technology, P.O. Box 14665-576, Tehran, Iran;
Iranian National Center for Laser Science and Technology, P.O. Box 14665-576, Tehran, Iran;
residual stress; platinum; RF sputtering power; microstructure;
机译:使用非合金Ti / Au金属化方案对RF溅射ZnO薄膜的真实欧姆接触
机译:Ti / Al / Pt / Au欧姆接触与掺杂磷的ZnO薄膜的比接触电阻
机译:TI1-XALXN涂层反应大功率脉冲磁控溅射:薄膜/底板界面对残余应力和高温氧化的影响
机译:射频离子束溅射和消除残余应力技术制备的SiN_x光学薄膜
机译:用于神经刺激应用的平面和激光微结构铂薄膜表面上溅射的氧化铱薄膜的表征。
机译:AlGaN / GaN HEMT的优化Ti / Al / Ta / Au欧姆接触的电学表征和纳米级表面形貌
机译:Pb的残余应力和电性能(Zr 0.52,Ti 0.48)O 3薄膜RF直接溅射Cu箔