Mathematical characterization of oxidized crystalline silicon nanowires grown by electroless process

摘要

Silicon nanowires were created via the electroless etching technique using silver nitrate (AgNO_3)/hydrofluoric acid (HF) solution. The prepared raw samples were oxidized for various intervals, so as to have an end result of various nanowire thicknesses. Scanning electron microscope (SEM) images were taken of the original nanowires, the oxidized nanowires and then the oxidized and etched (in HF solution) nanowires. When silicon nanowires are made, the area of exposed silicon undergoes "amplification," a formula for which is provided herein. When silicon nanowires are oxidized, the growth rate of the oxide layer varies according to the crystalline alignment. A formula for a polar plot is provided for illustrating the shape of a silicon nanowire after oxidation for various intervals, based on the Deal-Grove and Massoud models of oxidation.