机译:离子注入反应磁控溅射钛掺杂DLC薄膜的结构和性能研究
Department of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian, 116024, China,National Key Laboratory of Science and Technology on Power Beam Processes, Beijing Aeronautical Manufacturing Technology Research Institute, Beijing, 100024, China;
National Key Laboratory of Science and Technology on Power Beam Processes, Beijing Aeronautical Manufacturing Technology Research Institute, Beijing, 100024, China;
Department of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian, 116024, China;
Department of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian, 116024, China;
National Key Laboratory of Science and Technology on Power Beam Processes, Beijing Aeronautical Manufacturing Technology Research Institute, Beijing, 100024, China;
ti doping; DLC; ion implantation; adhesion; hydrophobic property;
机译:通过等离子体源离子注入和不平衡磁控溅射相结合的方法制备的氢化DLC膜的性能
机译:氮气流量比对反应磁控溅射制备(Hf:N)-DLC薄膜光学性能的影响
机译:通过反应磁控溅射制备的Ti-DLC薄膜的结构和切割性能
机译:通过反应性DC磁控溅射制备五氧化氧化钒薄膜纳米结构的结构性
机译:原位光谱椭圆偏振法研究直流反应磁控溅射沉积的硅膜的结晶度和界面结构。
机译:直流反应磁控溅射制备纳米结构多孔ZnO薄膜的表面性能
机译:不同氮流量比对反应磁控溅射制备(Hf:N)-DLC薄膜光学性质的影响