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首页> 外文期刊>Applied Surface Science >Effect of surface treatment with different sulfide solutions on the ultrafast dynamics of photogenerated carriers in GaAs(1 00)
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Effect of surface treatment with different sulfide solutions on the ultrafast dynamics of photogenerated carriers in GaAs(1 00)

机译：不同硫化物表面处理对GaAs（1 00）中光生载流子超快动力学的影响

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摘要

The ultrafast carrier dynamics of GaAs(l00) surfaces passivated with different sulfide solutions is studied by time-resolved measurements of infrared absorption using the femtosecond visible-pump infrared-probe technique. After passivation of n-GaAs(l00) surface with the solution of ammonium sulfide in 2-propanol the three-fold decrease of the surface recombination velocity is observed. The treatment of the n-GaAs(100) surface with the aqueous sulfide solution has a smaller impact on the surface recombination velocity. The different effect of aqueous and alcoholic sulfide solutions on the efficiency of surface passivation is caused by the different mechanisms of charge transfer at the semiconductor/solution interfaces.
机译：通过使用飞秒可见泵红外探针技术对红外吸收进行时间分辨测量，研究了用不同硫化物溶液钝化的GaAs（100）表面的超快载流子动力学。用硫化铵的2-丙醇溶液对n-GaAs（100）表面进行钝化后，观察到表面复合速度降低了三倍。用硫化水溶液处理n-GaAs（100）表面对表面复合速度的影响较小。硫化水溶液和乙醇溶液对表面钝化效率的不同影响是由于半导体/溶液界面上电荷转移的机制不同而引起的。

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  • 来源
    《Applied Surface Science》 |2013年第15期|185-188|共4页
  • 作者

    Mikhail V.Lebedev; Katsuyoshi Ikeda; Hidenori Noguchi; Yusuke Abe; Kohei Uosaki;

  • 作者单位

    AF. loffe Physical-Technical Institute, Russian Academy of Sciences, Politekhnicheskaya 26, St. Petersburg 194021, Russia;

    Division of Chemistry, Graduate School of Science, Hokkaido University, Sapporo 060-0810, Japan,PRESTOJapan Science and Technology Agency (JST), 4-1-8 Honcho Kawaguchi, Saitama 332-0012, Japan,Global Research Center for Environmental and Energy based on Nanomaterials Science (GREEN), National Institute for Materials Science (N1MS), Namiki 1-1, Tsukuba 305-0044,Japan;

    Division of Chemistry, Graduate School of Science, Hokkaido University, Sapporo 060-0810, Japan,PRESTOJapan Science and Technology Agency (JST), 4-1-8 Honcho Kawaguchi, Saitama 332-0012, Japan,Global Research Center for Environmental and Energy based on Nanomaterials Science (GREEN), National Institute for Materials Science (N1MS), Namiki 1-1, Tsukuba 305-0044,Japan,International Center for Materials Nanoarchitectonics (WPI-MANA), NIMS, Namiki 1-1, Tsukuba 305-0044, Japan;

    Division of Chemistry, Graduate School of Science, Hokkaido University, Sapporo 060-0810, Japan;

    Division of Chemistry, Graduate School of Science, Hokkaido University, Sapporo 060-0810, Japan,Global Research Center for Environmental and Energy based on Nanomaterials Science (GREEN), National Institute for Materials Science (N1MS), Namiki 1-1, Tsukuba 305-0044,Japan,International Center for Materials Nanoarchitectonics (WPI-MANA), NIMS, Namiki 1-1, Tsukuba 305-0044, Japan;

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  • 正文语种 eng
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  • 关键词

    GaAs; sulfur passivation; surface recombination; semiconductor/solution interface; ammonium sulfide; solvent effect;

    机译：砷化镓;硫钝化表面重组;半导体/解决方案接口;硫化铵溶剂效应;

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