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Effect of post-sulfurization on the composition, structure and optical properties of Cu_2ZnSnS_4 thin films deposited by sputtering from a single quaternary target

机译:后硫化对单四元靶溅射沉积Cu_2ZnSnS_4薄膜的组成,结构和光学性能的影响

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摘要

Quaternary Cu_2ZnSnS_4 (CZTS) thin films were deposited on heated glass substrates directly from a non-stoichiometric quaternary CZTS target by radio-frequency (RF) magnetron sputtering process, followed by post-sulfurization in atmosphere of Ar+H_2S(5%). The results of X-ray diffraction (XRD), Raman spectra, and scanning electron microscope (SEM) show that post-annealed process can improve the crys-tallinity of CZTS thin films. Both XRD and Raman spectra analysis indicate the internal compressive stress relaxes in post-annealed CZTS thin films. Further transmission spectra demonstrate that the band gaps of post-annealed CZTS thin films are smaller than those of as-deposited due to the relaxation of internal compressive stress and the increase of Cu content in the post-annealed CZTS films.
机译:通过射频(RF)磁控溅射工艺,从非化学计量的四级CZTS靶材直接在加热的玻璃基板上沉积四级Cu_2ZnSnS_4(CZTS)薄膜,然后在Ar + H_2S(5%)的气氛中进行后硫化。 X射线衍射(XRD),拉曼光谱和扫描电子显微镜(SEM)的结果表明,后退火工艺可以改善CZTS薄膜的结晶度。 XRD和拉曼光谱分析均表明,在退火后的CZTS薄膜中内部压缩应力松弛。进一步的透射光谱表明,由于内部压缩应力的松弛和退火后的CZTS薄膜中Cu含量的增加,退火后的CZTS薄膜的带隙小于沉积时的带隙。

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  • 来源
    《Applied Surface Science》 |2013年第1期|133-138|共6页
  • 作者单位

    Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai 200241, China;

    Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai 200241, China;

    Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai 200241, China;

    Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai 200241, China;

    Shanxhai Center for Photovoltaks. Shanehai 201201. China;

    Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai 200241, China;

    Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai 200241, China;

    Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai 200241, China,Shanxhai Center for Photovoltaks. Shanehai 201201. China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Cu_2ZnSnS_4 thin films; sputtering; post-sulfurization; composition; structure; optical properties;

    机译:Cu_2ZnSnS_4薄膜;溅射后硫化组成;结构体;光学性质;

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