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Composition and structure variation for magnetron sputtered tantalum oxynitride thin films, as function of deposition parameters

机译:磁控溅射氧氮化钽薄膜的组成和结构变化,取决于沉积参数

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摘要

Tantalum oxynitride thin films were produced by magnetron sputtering. The films were deposited using a pure Ta target and a working atmosphere with a constant N-2/O-2 ratio. The choice of this constant ratio limits the study concerning the influence of each reactive gas, but allows a deeper understanding of the aspects related to the affinity of Ta to the non-metallic elements and it is economically advantageous. This work begins by analysing the data obtained directly from the film deposition stage, followed by the analysis of the morphology, composition and structure. For a better understanding regarding the influence of the deposition parameters, the analyses are presented by using the following criterion: the films were divided into two sets, one of them produced with grounded substrate holder and the other with a polarization of -50 V. Each one of these sets was produced with different partial pressure of the reactive gases P(N-2 + O-2). All the films exhibited a O/N ratio higher than the N/O ratio in the deposition chamber atmosphere. In the case of the films produced with grounded substrate holder, a strong increase of the O content is observed, associated to the strong decrease of the N content, when P(N-2 + O-2) is higher than 0.13 Pa. The higher Ta affinity for O strongly influences the structural evolution of the films. Grazing incidence X-ray diffraction showed that the lower partial pressure films were crystalline, while X-ray reflectivity studies found out that the density of the films depended on the deposition conditions: the higher the gas pressure, the lower the density. Firstly, a dominant beta-Ta structure is observed, for low P( N-2 + O-2); secondly a fcc-Ta(N, O) structure, for intermediate P(N-2 + O-2); thirdly, the films are amorphous for the highest partial pressures. The comparison of the characteristics of both sets of produced TaNxOy films are explained, with detail, in the text. (C) 2015 Elsevier B.V. All rights reserved.
机译:氮氧化钽薄膜通过磁控溅射制备。使用纯Ta靶和恒定N-2 / O-2比的工作气氛沉积薄膜。该恒定比率的选择限制了关于每种反应气体影响的研究,但是允许更深入地了解与Ta对非金属元素的亲和力有关的方面,并且在经济上是有利的。这项工作首先分析直接从膜沉积阶段获得的数据,然后分析形态,组成和结构。为了更好地了解沉积参数的影响,使用以下准则进行了分析:将薄膜分为两组,其中一组由接地的基板支架生产,另一组具有-50 V极化。其中一组是在不同的反应气体分压P(N-2 + O-2)下产生的。在沉积室气氛中,所有膜均显示出高于N / O比的O / N比。在使用接地的基板支架制作的薄膜中,当P(N-2 + O-2)高于0.13 Pa时,会观察到O含量的大幅增加,这与N含量的大幅降低有关。较高的Ta对O的亲和力强烈影响薄膜的结构演变。掠入射X射线衍射表明较低的分压膜是晶体,而X射线反射率研究发现,膜的密度取决于沉积条件:气压越高,密度越低。首先,对于低P(N-2 + O-2),观察到显性的β-Ta结构。其次是中间P(N-2 + O-2)的fcc-Ta(N,O)结构;第三,对于最高的分压,薄膜是无定形的。文中详细解释了两组生产的TaNxOy薄膜的特性比较。 (C)2015 Elsevier B.V.保留所有权利。

著录项

  • 来源
    《Applied Surface Science》 |2015年第15期|508-517|共10页
  • 作者单位

    Transilvania Univ, Dept Mat Sci, Brasov 500036, Romania;

    Transilvania Univ, Dept Mat Sci, Brasov 500036, Romania;

    Transilvania Univ, Dept Mat Sci, Brasov 500036, Romania;

    Natl Inst Laser Plasma & Radiat Phys, Laser Dept, Magurele, Romania;

    Univ Lisbon, Inst Super Tecn, Ctr Ciencias & Tecnol Nucl, P-2695066 Bobadela Lrs, Portugal;

    Univ Lisbon, Inst Super Tecn, Inst Plasmas & Fusao Nucl, P-2695066 Bobadela Lrs, Portugal;

    Univ Lyon, Ecole Cent Lyon, Inst Nanotechnol Lyon, CNRS,UMR 5270, F-69134 Ecully, France|INSA Lyon, MATEIS Lab, F-69621 Villeurbanne, France;

    Univ Minho, Ctr Phys, P-4710057 Braga, Portugal;

    Univ Minho, Ctr Phys, P-4710057 Braga, Portugal;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Tantalum oxynitride; Sputtering; SEM; RBS; Structure;

    机译:氮氧化钽;溅射;SEM;RBS;结构;

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