首页> 外文期刊>Applied Surface Science >Computer assisted optimization of copper sulphide thin film coating parameters on glass substrates
【24h】

Computer assisted optimization of copper sulphide thin film coating parameters on glass substrates

机译:计算机辅助优化玻璃基板上的硫化铜薄膜涂层参数

获取原文
获取原文并翻译 | 示例
获取外文期刊封面目录资料

摘要

In this work, copper sulphide (CuS) thin films were deposited on glass substrates by chemical bath deposition method under different pH, deposition temperature, stirring speed and deposition time. The effects of process parameters, such as pH from 1.8 to 2.2, deposition temperature from 30 to 50 degrees C, stirring speed from 50 to 250 rpm and deposition time from 8 to 40 h on the band gap, were optimized by central composite design (CCD) of response surface methodology (RSM). Five-level-four-factor CCD was employed to evaluate the effects of the deposition parameters on the band gap of CuS thin films. A quadratic model was established as a functional relationship between four independent variables and the band gap. Analysis of variance revealed that the proposed model was adequate. The optimum pH, deposition temperature, stirring speed and deposition time were found to be 2.10, 44.33 degrees C, 200 rpm, and 32h, respectively. Under these conditions, the experimental band gap of CuS was observed as 2.74 eV, which was well in close agreement with predicted value (2.71 eV) by the model. (C) 2015 Elsevier B.V. All rights reserved.
机译:在这项工作中,通过化学浴沉积法在不同的pH,沉积温度,搅拌速度和沉积时间下,在玻璃基板上沉积了硫化铜(CuS)薄膜。通过中心复合设计优化了工艺参数的影响,例如pH从1.8到2.2,沉积温度从30到50摄氏度,搅拌速度从50到250 rpm和沉积时间从8到40 h对带隙的影响( CCD)的响应面方法(RSM)。采用五能级四因子CCD来评估沉积参数对CuS薄膜带隙的影响。建立了二次模型,作为四个独立变量与带隙之间的函数关系。方差分析表明,提出的模型是足够的。发现最佳pH,沉积温度,搅拌速度和沉积时间分别为2.10、44.33℃,200rpm和32h。在这些条件下,CuS的实验带隙为2.74 eV,与模型的预测值(2.71 eV)非常吻合。 (C)2015 Elsevier B.V.保留所有权利。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号