机译:在异质结发光二极管应用中作为中间层的MgO的应变NiO和MgO异质结处的带偏移的确定
Raja Ramanna Ctr Adv Technol, Indore 452013, Madhya Pradesh, India;
Bhabha Atom Res Ctr, Bombay 400085, Maharashtra, India;
Raja Ramanna Ctr Adv Technol, Indore 452013, Madhya Pradesh, India;
Raja Ramanna Ctr Adv Technol, Indore 452013, Madhya Pradesh, India;
Raja Ramanna Ctr Adv Technol, Indore 452013, Madhya Pradesh, India;
Raja Ramanna Ctr Adv Technol, Indore 452013, Madhya Pradesh, India;
Raja Ramanna Ctr Adv Technol, Indore 452013, Madhya Pradesh, India;
Raja Ramanna Ctr Adv Technol, Indore 452013, Madhya Pradesh, India;
Bhabha Atom Res Ctr, Bombay 400085, Maharashtra, India;
Raja Ramanna Ctr Adv Technol, Indore 452013, Madhya Pradesh, India;
Band offset; Photoelectron spectroscopy; XRD; Wide band gap semiconductors;
机译:NiO / GaN异质结在发光二极管中的外延生长和能带取向特性
机译:X射线光电子能谱法测定MgO / AlN异质结带隙
机译:X射线光电子能谱法测定MgO / GaN异质结带隙
机译:p-GaN / MgO / n-ZnO异质结发光二极管的电致发光
机译:模型有机光伏和有机发光二极管有机-有机'和金属-有机异质结的光谱研究。
机译:通过优化MgO层间厚度从ZnO量子点基/ GaN异质结二极管中装饰银的局部表面等离子体增强紫外电致发光
机译:GaN / MgO / ZnO异质结发光二极管