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Role of crystal orientation on chemical mechanical polishing of single crystal copper

机译:晶体取向对单晶铜化学机械抛光的作用

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摘要

The material removal mechanism of single crystal copper in chemical mechanical polishing (CMP) has not been intensively investigated. And the role of crystal orientation in CMP of single crystal cooper is not quite clear yet. Quasi-continuum method was adopted in this paper to simulate the process of nano-particles grinding on single crystal copper in CMP process. Three different crystal orientations, i.e. x[100]y[001], x[001]y[110] and x[-211]y[111], were chosen for analysis. The atom displacement diagrams, stress distribution diagrams and load-displacement curves were obtained. After analyzing the deformation mechanism, residual stress of the work piece material and cutting force, results showed that, the crystal orientation of work piece has great influence on the deformation characteristics and surface quality of work piece during polishing. In the A(001)[100] orientation, the residual stress distribution after polishing is deeper, and the stress is larger than that in the B(110)[001] and C(111)[-211] orientations. And the average tangential cutting force in the A(001)]100] orientation is much larger than those in the other two crystal orientation. This research is helpful to revealing the material removal mechanism of CMP process. (C) 2016 Elsevier B.V. All rights reserved.
机译:化学机械抛光(CMP)中单晶铜的材料去除机理尚未得到深入研究。并且晶体取向在单晶铜的CMP中的作用还不清楚。本文采用准连续法模拟了CMP工艺中单晶铜纳米颗粒的磨削过程。选择三种不同的晶体取向,即x [100] y [001],x [001] y [110]和x [-211] y [111]进行分析。得到了原子位移图,应力分布图和载荷-位移曲线。通过分析变形机理,工件材料的残余应力和切削力,结果表明,工件的晶向对抛光过程中的变形特性和表面质量有很大的影响。在A(001)[100]方向上,抛光后的残余应力分布更深,并且应力大于B(110)[001]和C(111)[-211]方向上的应力。而且,在A(001)] 100]方向上的平均切向切削力比在其他两个晶体方向上的平均切向切削力大得多。该研究有助于揭示CMP工艺的材料去除机理。 (C)2016 Elsevier B.V.保留所有权利。

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