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机译:第一性原理研究CO,NO在Au,Pt,Pd或Ni掺杂的MoS2单层上的吸附
Anyang Normal Univ, Sch Phys, Anyang 455000, Peoples R China;
Henan Univ Sci & Technol, Coll Phys & Engn, Luoyang 471023, Peoples R China;
Anyang Normal Univ, Sch Phys, Anyang 455000, Peoples R China;
Anyang Normal Univ, Sch Phys, Anyang 455000, Peoples R China;
Nanyang Normal Univ, Phys & Elect Engn Coll, Nanyang 473061, Peoples R China;
Nanyang Normal Univ, Phys & Elect Engn Coll, Nanyang 473061, Peoples R China;
Henan Normal Univ, Coll Phys & Elect Engn, Xinxiang 453007, Peoples R China;
Henan Normal Univ, Coll Phys & Elect Engn, Xinxiang 453007, Peoples R China;
First-principles calculation; CO and NO; Adsorption; Doping; MoS2 monolayer;
机译:Ag,Ni,Au,Pt:第一原理研究的MOS2单层SF6分解的理论研究
机译:贵金属Adatoms(Pd,Pt,Cu,Ag和Au)在MOS2单层上的吸附和扩散行为:第一原理研究
机译:PD掺杂MOS2单层H2S和SO2吸附结构和电子性质的第一原理研究
机译:Fcc-Au堆积的Pd表面上C_2H_4吸附的第一性原理计算
机译:单层MoS2和MoS2 /量子点杂化物:新型光电材料。
机译:DFT研究Ni掺杂MoS2单层膜对H2S和SO2的吸附
机译:掺杂MOS2单层核碱基的吸附行为:DFT研究