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Molecular dynamics simulation of nano-indentation of (111) cubic boron nitride with optimized Tersoff potential

机译:优化的Tersoff势的(111)立方氮化硼纳米压痕的分子动力学模拟

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We conduct molecular dynamics simulation of nanoindentation on (111) surface of cubic boron nitride and find that shuffle-set dislocations slip along <112> direction on {111} plane at the initial stage of the indentation. The shuffle-set dislocations are then found to meet together, forming surfaces of a tetrahedron. We also find that the surfaces are stacking-fault zones, which intersect with each other, forming edges of stair-rod dislocations along <110> direction. Moreover, we also calculate the generalized stacking fault (GSF) energies along various gliding directions on several planes and find that the GSF energies of the <112>{111} and <110>{111} systems are relatively smaller, indicating that dislocations slip more easily along <110> and <112> directions on the {111} plane. (C) 2016 Elsevier B.V. All rights reserved.
机译:我们在立方氮化硼的(111)表面进行了纳米压痕的分子动力学模拟,发现在压痕初始阶段,改组位错在{111}平面上沿<112>方向滑动。然后发现改组定的位错会聚在一起,形成四面体的表面。我们还发现,这些表面是堆垛层错区域,它们彼此相交,形成沿<110>方向的楼梯杆错位的边缘。此外,我们还计算了在多个平面上沿不同滑移方向的广义堆垛层错(GSF)能量,发现<112> {111}和<110> {111}系统的GSF能量相对较小,表明位错滑移沿{111}平面上的<110>和<112>方向更容易。 (C)2016 Elsevier B.V.保留所有权利。

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