机译:电子回旋共振氢氮混合等离子体预处理SiC表面并结合后氧化退火钝化SiO2 / 4H-SiC界面缺陷
Dalian Univ Technol, Sch Elect Sci & Technol, Fac Elect Informat & Elect Engn, 2 Linggong Rd, Dalian 116024, Peoples R China;
Dalian Univ Technol, Minist Educ, State Key Lab Mat Modificat Laser Ion & Electron, Dalian 116024, Peoples R China;
Dalian Univ Technol, Sch Elect Sci & Technol, Fac Elect Informat & Elect Engn, 2 Linggong Rd, Dalian 116024, Peoples R China;
SiC semiconductor; SiO2/SiC interface; Density of interface traps; Surface pretreatment; Surface states;
机译:电子回旋共振微波氮氢混合等离子体后氧化退火改善SiO2 / 4H-SiC界面性能
机译:电子回旋共振微波氮氢混合等离子体后氧化退火改善SiO_2 / 4H-SiC界面性能
机译:发行人注:“氢-氮混合等离子体对4H-SiC表面进行化学和电子钝化” [应用物理来吧104,202101(2014)]
机译:通过POCl3后氧化退火还原SiO2 / 4H-SiC界面态
机译:利用电子顺磁共振和光电子顺磁共振研究半绝缘4H-SiC中的缺陷能级
机译:通过直接等离子体辅助氧化控制4H-SiC上生长的SiO2膜中的缺陷和过渡层
机译:纯氮气中后氧化退火siO2 / 4H-siC界面氮化的研究