机译:掺杂Ni的空位偏转单壁(8,0)碳纳米管上SO2分子吸附的第一性原理研究
S China Normal Univ, Sch Phys Telecommun Engn, Guangzhou 510006, Guangdong, Peoples R China;
S China Normal Univ, Sch Phys Telecommun Engn, Guangzhou 510006, Guangdong, Peoples R China;
S China Normal Univ, Sch Phys Telecommun Engn, Guangzhou 510006, Guangdong, Peoples R China;
S China Normal Univ, Sch Phys Telecommun Engn, Guangzhou 510006, Guangdong, Peoples R China;
S China Normal Univ, Sch Phys Telecommun Engn, Guangzhou 510006, Guangdong, Peoples R China;
S China Normal Univ, Sch Phys Telecommun Engn, Guangzhou 510006, Guangdong, Peoples R China;
S China Normal Univ, Sch Phys Telecommun Engn, Guangzhou 510006, Guangdong, Peoples R China;
S China Normal Univ, Sch Phys Telecommun Engn, Guangzhou 510006, Guangdong, Peoples R China;
Ni-doped carbon nanotubes; Vacancy; Adsorption; SO2;
机译:SO2吸附对Fe /共掺杂空位的第一原理研究缺陷传感器应用中的单壁(8,0)碳纳米管
机译:掺杂(8,0)氮化硼纳米管上SO2分子的吸附:第一性原理研究
机译:镍掺杂单壁之字形(n,0)CNT(n = 4,5,6)对SO2分子的吸附敏感性的第一性原理研究
机译:垂直对齐的单壁碳纳米管上的水分子吸附
机译:原子力显微镜研究的单壁碳纳米管的金属性和腐蚀抑制剂的吸附。
机译:石墨烯单壁碳纳米管结的机械和电子性能的第一性原理研究
机译:CH3COOH在(6,0),(7,0)和(8,0)锯齿形,(4,4)和(5,5)扶手单壁碳纳米管上的吸附性能:密度泛函研究