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Single-layer graphene/titanium oxide cubic nanorods array/FTO heterojunction for sensitive ultraviolet light detection

机译:单层石墨烯/氧化钛立方纳米棒阵列/ FTO异质结,用于敏感的紫外光检测

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摘要

In this study, we report on the fabrication of a sensitive ultraviolet photodetector (UVPD) by simply transferring single-layer graphene(SLG) on rutile titanium oxide cubic nanorod (TiO(2)NRs) array. The cubic TiO(2)NRs array with strong light trapping effect was grown on fluorine-doped tin oxide (FTO) glass through a hydrothermal approach. The as-assembled UVPD was very sensitive to UV light illumination, but virtually blind to white light illumination. The responsivity and specific detectivity were estimated to be 52.1 A/W and 4.3 x 10(12) Jones, respectively. What is more, in order to optimize device performance of UVPD, a wet-chemistry treatment was then employed to reduce the high concentration of defects in TiO(2)NRs during hydrothermal growth. It was found that the UVPD after treatment showed obvious decrease in sensitivity, but the response speed (rise time: 80 ms, fall time: 160 ms) and specific detectivity were substantially increased. It is also found that the speicific detectivity was imporoved by six-fold to 3.2 x 10(13) Jones, which was the best result in comparison with previously reported TiO2 nanostructures or thin film based UVPDs. This totality of this study shows that the present SLG/TiO2NR/FTO UVPD may find potential application in future optoelectronic devices and systems. (C) 2017 Elsevier B.V. All rights reserved.
机译:在这项研究中,我们报告了通过简单地在金红石型二氧化钛立方纳米棒(TiO(2)NRs)阵列上转移单层石墨烯(SLG)来制作灵敏的紫外线光电探测器(UVPD)。通过水热方法在掺氟氧化锡(FTO)玻璃上生长了具有强光捕获作用的立方TiO(2)NRs阵列。组装后的UVPD对紫外线照明非常敏感,但实际上对白光照明却视而不见。响应度和比探测度分别估计为52.1 A / W和4.3 x 10(12)Jones。此外,为了优化UVPD的器件性能,然后采用湿化学处理来减少水热生长过程中TiO(2)NRs中高浓度的缺陷。发现处理后的UVPD显示出明显的灵敏度降低,但是响应速度(上升时间:80ms,下降时间:160ms)和比检测率显着提高。还发现特定的检测率提高了六倍,达到3.2 x 10(13)Jones,与以前报道的TiO2纳米结构或基于薄膜的UVPD相比,这是最好的结果。这项研究的总体结果表明,目前的SLG / TiO2NR / FTO UVPD可能会在未来的光电器件和系统中找到潜在的应用。 (C)2017 Elsevier B.V.保留所有权利。

著录项

  • 来源
    《Applied Surface Science》 |2017年第31期|391-398|共8页
  • 作者单位

    Hefei Univ Technol, Sch Mat Sci & Engn, Hefei 230009, Anhui, Peoples R China;

    Hefei Univ Technol, Sch Mat Sci & Engn, Hefei 230009, Anhui, Peoples R China;

    Hefei Univ Technol, Sch Elect Sci & Appl Phys, Hefei 230009, Anhui, Peoples R China;

    Hefei Univ Technol, Sch Mat Sci & Engn, Hefei 230009, Anhui, Peoples R China;

    Hefei Univ Technol, Sch Mat Sci & Engn, Hefei 230009, Anhui, Peoples R China;

    Hefei Univ Technol, Sch Elect Sci & Appl Phys, Hefei 230009, Anhui, Peoples R China;

    Hefei Univ Technol, Sch Elect Sci & Appl Phys, Hefei 230009, Anhui, Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    UV light photodetector; Wide bandgap semiconductor; Light trapping effect; MSM junction; Responsivity;

    机译:紫外光电探测器;宽禁带半导体;陷光效应;MSM结;响应度;

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