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Surface characterization and cathodoluminescence degradation of ZnO thin films

机译:ZnO薄膜的表面表征和阴极发光降解

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ZnO thin films were successfully synthesized by the sol-gel method using the spin coater technique. The films were annealed at 600 degrees C in air for two hours and in Ar/H-2(5%) flow for 30 and 60 min, respectively. Structural analysis, surface morphology and characterization, as well as optical analysis (photoluminescence and cathodeluminescence (CL)) were done on the samples and discussed in detail. CL degradation during prolonged electron irradiation on the films was also determined. A preferential orientation of the c-axis perpendicular to the surface was observed from X-ray diffraction data showing the peak from the (002) plane for the films annealed in both the air and in the H-2 flow. The film annealed in air exhibited a broad visible emission as well as a strong ultraviolet emission. A single-green emission peak around 511 nm was obtained from the film that was annealed in Ar/H-2 flow for 60 min. The CL study revealed that the intensity of the green emission (511 nm) was very stable during electron bombardment for electron doses of more than 160 C/cm(2). (C) 2016 Elsevier B.V. All rights reserved.
机译:使用旋涂机技术通过溶胶-凝胶法成功合成了ZnO薄膜。薄膜分别在600摄氏度的空气中退火2小时,并在Ar / H-2(5%)流动中分别退火30分钟和60分钟。对样品进行了结构分析,表面形态和表征以及光学分析(光致发光和阴极致发光(CL)),并进行了详细讨论。还确定了长时间在膜上进行电子辐照时的CL降解。从X射线衍射数据观察到垂直于表面的c轴的优选取向,该X射线衍射数据示出了在空气和H-2流中退火的膜从(002)面的峰。在空气中退火的薄膜表现出宽的可见光发射以及强烈的紫外线发射。从在Ar / H-2流中退火60分钟的薄膜中获得了约511 nm的单绿发射峰。 CL研究表明,对于电子剂量大于160 C / cm(2)的电子轰击,绿色发射强度(511 nm)非常稳定。 (C)2016 Elsevier B.V.保留所有权利。

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