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Network analysis of semiconducting Zn1-xCdxS based photosensitive device using impedance spectroscopy and current-voltage measurement

机译:基于阻抗谱和电流电压测量的基于Zn1-xCdxS的半导体光敏器件的网络分析

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ZnCdS is an intermediate ternary alloy type semiconducting material which has huge tunable structural, optical and electrical properties. Here, we have synthesized Zn1-xCdxS compound and characterized its structural, optical and charge transport properties. It is seen that the particle size is greatly influenced by the amount of alloy concentration of cadmium. The performance of semiconductor device such as Schottky diode depends mainly on the charge transportation through the metal-semiconductor junction. So, we have fabricated Al/Zn1-xCdxS/ITO device and investigated the bias dependent impedance properties through equivalent circuit network analysis to study the electron lifetime and interfacial region resistance. The result of network analysis indicates that the charge transportation through Al-Zn0.6Cd0.4S is better than the other fabricated devices. For further explanation, we have studied the capacitance-voltage (C-V) characteristic under dark and current-voltage (I-V) characteristic under dark and light. We have investigated barrier height, depletion layer width and employed SCLC (space charge limited current) theory in I-V characteristics to determine mobility, transit time and diffusion length. The mobility and diffusion length for Zn0.6Cd0.4S fabricated device are derived as 23.01 m(2) V-1 s(-1) and 4.4 mu m respectively while both the values are less for the other devices. These values are enhanced upon illumination for all the devices but superiority comes from the Al/Zn0.6Cd0.4S/ITO device and it leads us to measure the photosensitivity, responsivity, specific detectivity. As expected, the photosensing parameters are enhanced for the Zn0.6Cd0.4S fabricated device. So, this literature not only explores the metal semiconductor charge transportation using impedance spectroscopy (IS) network analysis and SCLC theory but also explain it from the structural point of view. (C) 2017 Elsevier B.V. All rights reserved.
机译:ZnCdS是一种中间三元合金型半导体材料,具有巨大的可调结构,光学和电学性质。在这里,我们合成了Zn1-xCdxS化合物,并对其结构,光学和电荷传输特性进行了表征。可以看出,粒径受镉合金浓度的影响很大。诸如肖特基二极管的半导体器件的性能主要取决于通过金属-半导体结的电荷传输。因此,我们制造了Al / Zn1-xCdxS / ITO器件,并通过等效电路网络分析研究了与偏压有关的阻抗特性,以研究电子寿命和界面电阻。网络分析的结果表明,通过Al-Zn0.6Cd0.4S进行的电荷传输要优于其他制造的器件。为了进一步说明,我们研究了在黑暗条件下的电容-电压(C-V)特性和在黑暗条件下的电流-电压(I-V)特性。我们研究了势垒高度,耗尽层宽度,并在I-V特性中采用了SCLC(空间电荷限制电流)理论来确定迁移率,渡越时间和扩散长度。 Zn0.6Cd0.4S制成的器件的迁移率和扩散长度分别为23.01 m(2)V-1 s(-1)和4.4μm,而其他器件的两个值均较小。这些值在所有设备上都可以通过照明得到增强,但优越性来自Al / Zn0.6Cd0.4S / ITO设备,这使我们能够测量光敏性,响应性和比检测率。正如预期的那样,Zn0.6Cd0.4S制成的器件的光敏参数得到了增强。因此,该文献不仅使用阻抗谱(IS)网络分析和SCLC理论探索了金属半导体的电荷传输,而且还从结构的角度对其进行了解释。 (C)2017 Elsevier B.V.保留所有权利。

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