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Peculiarities of interaction of the p(z)-, pi- electrons and the sigma(p)-holes at the top 1-6 layers of HOPG

机译:HOPG顶部1-6层的p(z)-,pi-电子与sigma(p)-孔相互作用的特殊性

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摘要

The present work continues the analysis of results of Dementjev et al. (2015) in order to identify the interlayer interactions of the pi-bands. Analysis of the N(E) C KVV Auger spectra of highly-ordered pyrographite showed the absence of the electron exchange between the pi-bands in 1-6 layers. Since the pi-bands are formed by the p(z) -> pi transitions, one can suggest that the pi-band occupation at each graphene layer is formed by the p(z)-electrons of this layer. Since the p(z), electrons belong to the sigma(p)-bands, the p(z) -> pi transitions in the sigma(p-)bands in each of 2-6 graphene layers result in formation of holes H, whose concentration is equal to the concentration of electrons in the pi-bands [H-i] [pi(i)]. This shows the origin of the ambipolar conductivity in graphene.
机译:本工作继续对Dementjev等人的结果进行分析。 (2015年),以确定pi波段的层间相互作用。高阶烙铁矿的N(E)C KVV Auger光谱分析表明,在1-6层的pi带之间没有电子交换。由于pi带是由p(z)→pi跃迁形成的,因此可以暗示每个石墨烯层上的pi带占据是由该层的p(z)电子形成的。由于p(z)电子属于sigma(p)带,因此2-6个石墨烯层中每个sigma(p-)带中的p(z)-> pi跃迁都导致形成空穴H,其浓度等于pi波段[Hi] [pi(i)]中电子的浓度。这显示了石墨烯中双极性电导率的起源。

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