Design of a new two-dimensional diluted magnetic semiconductor: Mn-doped GaN monolayer

摘要

To meet the need of low-dimensional spintronic devices, we investigate the electronic structure and magnetic properties of Mn-doped GaN monolayer using first-principles method. We find the nonmagnetic GaN monolayer exhibits half-metallic ferromagnetism by Mn doping due to double-exchange mechanism. Interestingly, the ferromagnetic coupling in Mn-doped GaN monolayer is enhanced with tensile strain and weakened with compressive strain. What is more, the ferromagnetic-antiferromagnetic transformation occurs under compressive strain of-9.5%. These results provide a feasible approach for fabrication of a new GaN monolayer based diluted magnetic semiconductor. (C) 2016 Elsevier B.V. All rights reserved.