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Rational design of multifunctional devices based on molybdenum disulfide and graphene hybrid nanostructures

机译:基于二硫化钼和石墨烯杂化纳米结构的多功能器件的合理设计

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摘要

We rationally designed a new type of hybrid materials, molybdenum disulfide (MoS2) synthesized by Mo pre-deposition followed by subsequent sulfurization process directly on thermal chemical vapor deposition (TCVD)-grown graphene, for applications in a multifunctional device. The synthesis of stoichiometric and uniform multilayer MoS2 and high-crystalline monolayer graphene was evaluated by X-ray photoelectron spectroscopy and Raman spectroscopy. To examine the electrical transport and photoelectrical properties of MoS2-graphene hybrid films, field effect transistors (FETs) and visible-light photodetectors based on MoS2-graphene were both fabricated. As a result, the extracted mobility for MoS2-graphene hybrid FETs was two times higher than that of MoS2 FETs. In addition, the MoS2-graphene photodetectors revealed a significant photocurrent with abrupt switching behavior under periodic illumination. (C) 2016 Elsevier B.V. All rights reserved.
机译:我们合理设计了一种新型的杂化材料,即通过Mo预沉积合成的二硫化钼(MoS2),然后直接在热化学气相沉积(TCVD)生长的石墨烯上进行随后的硫化工艺,以用于多功能设备。通过X射线光电子能谱和拉曼光谱对化学计量均匀的多层MoS2和高结晶单层石墨烯的合成进行了评估。为了检查MoS2-石墨烯杂化膜的电传输和光电性能,均制作了场效应晶体管(FET)和基于MoS2-石墨烯的可见光光电探测器。结果,MoS2-石墨烯混合FET的提取迁移率是MoS2 FET的提取迁移率的两倍。此外,MoS2-石墨烯光电探测器在周期性照明下显示出显着的光电流,并具有突然的开关行为。 (C)2016 Elsevier B.V.保留所有权利。

著录项

  • 来源
    《Applied Surface Science》 |2017年第15期|557-561|共5页
  • 作者单位

    Korea Res Inst Chem Technol, Thin Film Mat Res Ctr, POB 107, Daejeon 305600, South Korea;

    Korea Res Inst Chem Technol, Thin Film Mat Res Ctr, POB 107, Daejeon 305600, South Korea;

    Korea Res Inst Chem Technol, Thin Film Mat Res Ctr, POB 107, Daejeon 305600, South Korea;

    Korea Res Inst Chem Technol, Thin Film Mat Res Ctr, POB 107, Daejeon 305600, South Korea;

    Korea Basic Sci Inst, Nanosurface Res Grp, Daejeon 302333, South Korea;

    Korea Basic Sci Inst, Nanosurface Res Grp, Daejeon 302333, South Korea;

    Korea Res Inst Chem Technol, Thin Film Mat Res Ctr, POB 107, Daejeon 305600, South Korea;

    Korea Res Inst Chem Technol, Thin Film Mat Res Ctr, POB 107, Daejeon 305600, South Korea;

    Korea Res Inst Chem Technol, Thin Film Mat Res Ctr, POB 107, Daejeon 305600, South Korea;

    Korea Res Inst Chem Technol, Thin Film Mat Res Ctr, POB 107, Daejeon 305600, South Korea;

    Korea Res Inst Chem Technol, Thin Film Mat Res Ctr, POB 107, Daejeon 305600, South Korea;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    MoS2-graphene hybrid films; Field effect transistors; Photodetectors;

    机译:MoS2-石墨烯杂化膜;场效应晶体管;光电探测器;

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