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Comparison of modification strategies towards enhanced charge carrier separation and photocatalytic degradation activity of metal oxide semiconductors (TiO2, WO3 and ZnO)

机译:增强载流子分离和金属氧化物半导体(TiO2,WO3和ZnO)光催化降解活性的改性策略比较

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Metal oxide semiconductors (TiO2, WO3 and ZnO) finds unparalleled opportunity in wastewater purification under UV/visible light, largely encouraged by their divergent admirable features like stability, non-toxicity, ease of preparation, suitable band edge positions and facile generation of active oxygen species in the aqueous medium. However, the perennial failings of these photocatalysts emanates from the stumbling blocks like rapid charge carrier recombination and meager visible light response. In this review, tailoring the surface-bulk electronic structure through the calibrated and veritable approaches such as impurity doping, deposition with noble metals, sensitizing with other compounds (dyes, polymers, inorganic complexes and simple chelating ligands), hydrogenation process (annealing under hydrogen atmosphere), electronic integration with other semiconductors, modifying with carbon nanostructures, designing with exposed facets and tailoring with hierarchical morphologies to overcome their critical drawbacks are summarized. Taking into account the materials intrinsic properties, the pros and cons together with similarities and striking differences for each strategy in specific to TiO2, WO3 & ZnO are highlighted. These subtlety enunciates the primacy for improving the structure-electronic properties of metal oxides and credence to its fore in the practical applications. Future research must focus on comparing the performances of ZnO, TiO2 and W03 in parallel to get insight into their photocatalytic behaviors. Such comparisons not only reveal the changed surface-electronic structure upon various modifications, but also shed light on charge carrier dynamics, free radical generation, structural stability and compatibility for photocatalytic reactions. It is envisioned that these cardinal tactics have profound implications and can be replicated to other semiconductor photocatalysts like CeO2, In2O3, Bi2O3, Fe2O3, BiVO4, AgX, BiOX (X = CI, Br & I), Bi2WO6, Bi2MoO6, etc., to improve their competence for various environmental applications. (C) 2016 Elsevier B.V. All rights reserved.
机译:金属氧化物半导体(TiO2,WO3和ZnO)在紫外线/可见光下的废水净化中发现了无与伦比的机会,这在很大程度上受到其令人赞叹的稳定性,无毒,易于制备,合适的能带边缘位置和易产生活性氧等令人鼓舞的特性的鼓舞种在水介质中。然而,这些光催化剂的长期失败源于绊脚石,例如快速的载流子重组和微弱的可见光响应。在这篇综述中,通过校准和切实可行的方法来定制表面本体的电子结构,例如杂质掺杂,贵金属沉积,对其他化合物(染料,聚合物,无机配合物和简单的螯合配体)敏化,氢化过程(在氢气中退火)大气),与其他半导体的电子集成,碳纳米结构的修饰,裸露面的设计以及分层形态的剪裁以克服它们的关键缺点。考虑到材料的固有特性,每种策略在特定于TiO2,WO3和ZnO方面的优点和缺点以及相似之处和不同之处都被突出显示。这些微妙之处说明了在实际应用中提高金属氧化物的结构电子性能的首要条件和信誉。未来的研究必须集中在并行比较ZnO,TiO2和WO3的性能上,以了解它们的光催化行为。这样的比较不仅揭示了经过各种修饰的表面电子结构的变化,而且还揭示了电荷载流子动力学,自由基的产生,结构稳定性和光催化反应的相容性。可以预见,这些基本策略具有深远的意义,可以复制到其他半导体光催化剂,例如CeO2,In2O3,Bi2O3,Fe2O3,BiVO4,AgX,BiOX(X = CI,Br&I),Bi2WO6,Bi2MoO6等。提高他们在各种环境应用中的能力。 (C)2016 Elsevier B.V.保留所有权利。

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