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机译:Ti(5 nm)/ Au(20 nm)/ Cr(3 nm)三层薄膜中纳米颗粒的化学态深入演化和亚10纳米分辨率的晶体取向映射
Chinese Acad Sci, Key Lab Microelect Devices & Integrated Technol, Inst Microelect, Beijing 100029, Peoples R China;
Tech Univ Denmark, Natl Ctr Micro & Nanofabricat, Danchip Cen, Orsteds Plads Bldg 347, DK-2800 Lyngby, Denmark;
Tech Univ Denmark, Natl Ctr Micro & Nanofabricat, Danchip Cen, Orsteds Plads Bldg 347, DK-2800 Lyngby, Denmark;
Chinese Acad Sci, Key Lab Microelect Devices & Integrated Technol, Inst Microelect, Beijing 100029, Peoples R China;
Tech Univ Denmark, Natl Ctr Micro & Nanofabricat, Danchip Cen, Orsteds Plads Bldg 347, DK-2800 Lyngby, Denmark;
Tech Univ Denmark, Natl Ctr Micro & Nanofabricat, Danchip Cen, Orsteds Plads Bldg 347, DK-2800 Lyngby, Denmark;
Tech Univ Denmark, Natl Ctr Micro & Nanofabricat, Danchip Cen, Orsteds Plads Bldg 347, DK-2800 Lyngby, Denmark;
Tech Univ Denmark, Natl Ctr Micro & Nanofabricat, Danchip Cen, Orsteds Plads Bldg 347, DK-2800 Lyngby, Denmark;
Chinese Acad Sci, Key Lab Microelect Devices & Integrated Technol, Inst Microelect, Beijing 100029, Peoples R China;
Chinese Acad Sci, Key Lab Microelect Devices & Integrated Technol, Inst Microelect, Beijing 100029, Peoples R China;
Chinese Acad Sci, Key Lab Microelect Devices & Integrated Technol, Inst Microelect, Beijing 100029, Peoples R China;
Tri-layer thin film; XPS depth profiling; Partial oxidation of adhesion layers; Crystal orientation mapping; Transmission Kikuchi diffraction (TKD);
机译:退火环境对化学溶液衍生的纳米Bi_(3.15)La_(0.85)Ti_3O_(12)薄膜的磁和铁电性能的影响
机译:化学气相沉积沉积10-20 Nm厚的多晶氧化锡薄膜中的导电
机译:通过化学气相沉积法沉积的10-20 nm厚的多晶氧化锡薄膜中的导电
机译:通过深度感应纳米压痕和刮擦技术表征LiNbO3 / Ti(20nm)/ Pt(10nm)/ Au(100nm)/ Au(10mum)铌酸锂光学调制器
机译:晶体-非晶态嵌段共聚物和共混物的纳米受限环境内的相形态和晶体取向。
机译:经典核磁共振:原位核磁共振策略用于通过结合液态和固态测量来绘制结晶过程的时间演化
机译:薄膜:生长的演变,晶体取向和晶界的金薄膜迷失方向分布(水晶研究和技术8/2018)
机译:化学制备的pb(Zr,Ti)O(sub 3)薄膜:取向和应力的影响