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Picosecond laser micropatterning of graphene films for rapid heating chips

机译:皮秒薄膜的皮秒激光微图案化,用于快速加热芯片

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This research aims to pattern multilayer graphene films for rapid heating chips with a multichannel electrode structure and to investigate the interaction between picosecond pulsed green lasers and graphene films coated on glass substrates. The optimal laser direct writing conditions consisted of the laser fluence of 4.72 J/cm(2), the pulse repetition frequency of 300 kHz, the scanning speed of a galvano scanner of 1500 mm/s, the overlapping rate of laser spots of 66%, and parallel lines of the laser processing path with the line-scan spacing of 1 lm in one-cycle process to fabricate the graphene-based heating chips with multichannel electrode structures. The surface morphology, cross-sectional profile, current-voltage (I-V) curve, material characterization, and electric heating behavior on graphene/glass substrates were detected by a confocal laser scanning microscope, a Hall effect probing measurement system, a Raman spectroscopy, and a temperature recorder, respectively. The experimental results showed that the laser ablating depths increased from 9 lm to 14.2 lm when the overlapping rates of laser spots increased from 11% to 94%, respectively. Moreover, the electric heating results revealed that the temperature of graphene-based heating chips increased with increasing the applied DC voltage. The heating rate of 6 degrees C/s for laser-patterned graphene films was larger than that of 1.5 degrees C/s for unpatterned graphene films. In addition, the maximum heating temperature of laser-patterned graphene films with multichannel electrode structures was approximately 93.4 degrees C when the applied DC voltage was 25 V. (C) 2018 Elsevier B.V. All rights reserved.
机译:这项研究旨在对具有多通道电极结构的快速加热芯片的多层石墨烯膜进行图案化,并研究皮秒脉冲绿色激光与涂覆在玻璃基板上的石墨烯膜之间的相互作用。最佳的激光直接写入条件包括4.72 J / cm(2)的激光通量,300 kHz的脉冲重复频率,电扫描仪的扫描速度为1500 mm / s,激光点的重叠率为66%以及在一个周期的过程中以1 lm的线扫描间隔的激光加工路径的平行线来制造具有多通道电极结构的石墨烯基加热芯片。通过共聚焦激光扫描显微镜,霍尔效应探测测量系统,拉曼光谱和拉曼光谱检测石墨烯/玻璃基板上的表面形态,横截面轮廓,电流-电压(IV)曲线,材料特性和电加热行为温度记录器。实验结果表明,当激光点的重叠率分别从11%增加到94%时,激光烧蚀深度从9 lm增加到14.2 lm。此外,电加热结果表明,石墨烯基加热芯片的温度随着施加的直流电压的升高而升高。激光图案化的石墨烯薄膜的6摄氏度/秒的加热速率大于未图案化的石墨烯薄膜的1.5摄氏度/秒的加热速率。此外,当施加的直流电压为25 V时,具有多通道电极结构的激光图案化石墨烯薄膜的最高加热温度约为93.4摄氏度。(C)2018 Elsevier B.V.保留所有权利。

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