A resistance ratio change phenomenon observed in Al doped ZnO sMark (AZO)/Cu(In1-xGax)Se-2/Mo resistive switching memory device

摘要

In this work, the Cu(In(1-x)Gax)Se-2 (CIGS), Al doped ZnO (AZO) and Mo has been used for constructing a resistive switching device with AZO/CIGS/Mo sandwich structure grown on a transparent glass substrate. The device represents a high-performance memory characteristics under ambient temperature. In particularly, a resistance ratio change phenomenon have been observed in our device for the first time. (C) 2017 Elsevier B.V. All rights reserved.