机译:石墨烯的选择性AuCl3掺杂可降低石墨烯器件的接触电阻
Sejong Univ, Graphene Res Inst, Seoul 143747, South Korea|Sejong Univ, Fac Nanotechnol & Adv Mat Engn, Seoul 143747, South Korea;
Sungkyunkwan Univ SKKU, SAINT, Suwon 16419, South Korea;
Sungkyunkwan Univ SKKU, SAINT, Suwon 16419, South Korea|Sungkyunkwan Univ SKKU, Dept Phys, Suwon 16419, South Korea;
Sejong Univ, Graphene Res Inst, Seoul 143747, South Korea|Sejong Univ, Fac Nanotechnol & Adv Mat Engn, Seoul 143747, South Korea;
Korea Res Inst Chem Technol, Thin Film Mat Res Ctr, Daejon 305600, South Korea;
Korea Res Inst Chem Technol, Thin Film Mat Res Ctr, Daejon 305600, South Korea;
Sejong Univ, Graphene Res Inst, Seoul 143747, South Korea|Sejong Univ, Fac Nanotechnol & Adv Mat Engn, Seoul 143747, South Korea;
Graphene; Contact resistivity; AuCl3; Stability;
机译:具有镍刻蚀石墨烯触点的低接触电阻石墨烯器件
机译:通过接触面积图案化降低石墨烯器件的接触电阻
机译:双层外延石墨烯器件中金属石墨烯欧姆接触电阻的改善
机译:掺杂N及其位置对石墨烯催化氢氯化氢反应的影响AuCl3
机译:一种使用氮掺杂石墨烯粉作为电极的β伏安器件的新方法。
机译:高效ORR电催化剂对热还原产生的还原型氧化石墨烯和氮掺杂的还原型氧化石墨烯的性能的提升
机译:具有镍蚀刻石墨烯的低接触电阻石墨烯器件 往来