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On-chip picosecond delay measurement of RSFQ digital logic gates

机译:RSFQ数字逻辑门的片上皮秒延迟测量

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摘要

Because RSFQ circuits are intended to operate at multi-GHz frequencies, a logical requirement for developing the technology is a method of accurately measuring the picosecond delays associated with individual logic circuits. A technique has been developed for on-chip measurements of such RSFQ gate delays. The central element in this scheme is a race between a path of calibrated variable delay and a path of unknown delay. Modification of the canonical RSFQ RS flip-flop circuit yields a multiple state destructive readout cell (MDRO), in which one can configure the number of flux quanta to be stored. This circuit has been experimentally verified for groups of two flux quanta. Used in concert with the confluence buffer, this scheme can provide the RSFQ designer with sub-picosecond pulse arrival delay information crucial for higher order circuit simulation. A detailed experimental process is presented from which this timing information can be extracted using basic low-speed measurement techniques.
机译:由于RSFQ电路旨在在数GHz频率下工作,因此开发该技术的逻辑要求是一种精确测量与各个逻辑电路相关的皮秒延迟的方法。已经开发了一种用于这种RSFQ门延迟的片上测量的技术。该方案中的核心要素是校准可变延迟路径与未知延迟路径之间的竞争。规范RSFQ RS触发器电路的修改产生了多状态破坏性读出单元(MDRO),其中可以配置要存储的磁通量的数量。该电路已针对两个通量量子的组进行了实验验证。与汇流缓冲区配合使用,该方案可以为RSFQ设计人员提供亚皮秒级脉冲到达延迟信息,这对于进行高阶电路仿真至关重要。提出了详细的实验过程,可以使用基本的低速测量技术从中提取该计时信息。

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