Development of 3 terminal devices based on asymmetric, long, YBCOJosephson junctions

摘要

The critical current of long, asymmetric Josephson junctions, I c, is highly dependent on the applied magnetic field and the geometry. Nearby currents are able to significantly modulate Ic , leading to many possible devices. We have fabricated asymmetric long junctions (1-32 μm) in YBCO thin films deposited on SrTiO3 bicrystals that show improved sensitivity to control fields compared with symmetrically biased structures. The effect of the size and shape of the structures has been investigated in order to optimise the gain and critical current. We have compared our results to simulations