Characterization of Si-CeO2-YBCO tri-layers grown by magnetron sputtering

摘要

Material aspects of heterostructural Si/CeO2, fabricated by magnetron sputtering as buffered substrates for sputtered YBa2Cu3O7-x (YBCO) films, are studied by means of X-ray diffraction, AFM, Raman and SIMS-ToF analysis. Different Si/CeO2 layouts are chosen and tri-layers Si/CeO2/YBCO, grown on the respective bi-layer substrates, are preliminary analyzed. Outstanding material issues suggest that in the framework of sputtering technology, epitaxy is out of reach for Si/CeO2/YBCO multi-layers. However, the results point toward the scalability/integrability of the technology with silicon processing when the main target consists of networking for integrated electronics.