Efficient fabrication process for superconducting integrated circuits using photosensitive polyimide insulation layers

摘要

Photosensitive polyimide insulation layers have been introduced to fabricate superconducting integrated circuits. It is shown to simplify the fabrication process, because the photosensitive polyimide insulation layer can be patterned by conventional photolithography process, resulting in the etching process unnecessary in the present new fabrication process. Three kinds of contact hole (junction top electrode contact, junction base electrode contact, and resistor contact) are simultaneously formed in the photolithography process of the polyimide. A minimum contact hole size is designed to be 1.5 /spl mu/m square for a 3 /spl mu/m /spl times/ 3 /spl mu/m squared junction. Superconducting current density of 2.4/spl times/10/sup 6/ A/cm/sup 2/ of the contact hole was measured. Palladium resistors were successfully made with through hole contacts of the photosensitive polyimide insulation layer. We demonstrated superconducting integrated circuits using this new fabrication process including the minimum 3 /spl mu/m /spl times/ 3 /spl mu/m squared Nb/Al-AlO/sub x//Nb Josephson tunnel junction. The circuit operation is also demonstrated in the fabricated superconducting integrated circuits with the photosensitive polyimide insulation layers.