Dark Counts in Nanostructured NbN Superconducting Single-Photon Detectors and Bridges

摘要

We present our studies on dark counts, observed as transient voltage pulses, in current-biased NbN superconducting single-photon detectors (SSPDs), as well as in ultrathin ($sim$4 nm), submicrometer-width (100 to 500 nm) NbN nanobridges. The duration of these spontaneous voltage pulses varied from 250 ps to 5 ns, depending on the device geometry, with the longest pulses observed in the large kinetic-inductance SSPD structures. Dark counts were measured while the devices were completely isolated (shielded by a metallic enclosure) from the outside world, in a temperature range between 1.5 and 6 K. Evidence shows that in our two-dimensional structures the dark counts are due to the depairing of vortex-antivortex pairs caused by the applied bias current. Our results shed some light on the vortex dynamics in 2-D superconductors and, from the applied point of view, on intrinsic performance of nanostructured SSPDs.