首页> 外文期刊>Applied Spectroscopy >Pressure Broadening of H2O Absorption Lines in the 1.3 μm Region Measured by Continuous Wave-Cavity Ring-Down Spectroscopy: Application in the Trace Detection of Water Vapor in N2, SiH4, CF4, and PH3
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Pressure Broadening of H2O Absorption Lines in the 1.3 μm Region Measured by Continuous Wave-Cavity Ring-Down Spectroscopy: Application in the Trace Detection of Water Vapor in N2, SiH4, CF4, and PH3

机译:连续波腔衰荡法测量1.3μmH 2 O吸收谱线的压力展宽:在N 2 中水蒸气的痕量检测中的应用, SiH 4 ,CF 4 和PH 3

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A continuous wave cavity ring-down (cw-CRD) spectrometer has been developed for the measurement of trace levels of water vapor by absorption spectroscopy at wavelengths in the vicinity of 1358 nm and 1392 nm. The speed of data acquisition and selectivity make cavity ringdown spectroscopy potentially more useful than current techniques for measurement of trace water in process gases and vacuum environments used for semiconductor manufacture where water vapor contamination has a detrimental effect on the final product. The pressure broadening coefficients (γ) for bath gases N2, air, and Ar and semiconductor process gases SiH4, PH3, and CF4 were determined for a range of absorption lines in the 2ν1 and ν1 + ν3 bands of H2O. For the transitions investigated, the concentration of water vapor in the sample gas varied from 1.7 × 1012 to 2.9 × 1015 molecule cm−3 in N2 at a total pressure of <10 mbar and was mixed with the bath gas of increasing pressure up to ∼200 mbar. The values of γ quantify the reduction in peak absorption cross-sections with bath gas pressure and, thus, their effects on the detection limit of water vapor. For a CRD spectrometer with a ring-down time of τ = 12.0 μs measured with a precision of 0.6%, detection limits for the measurement of water vapor in 1 atm N2 and of CF4 were estimated to be 18 and 14 ppbv, respectively. Competing absorption by SiH4 and PH3 in the 1.3 μm wavelength region results in respective detection limits for water vapor of 98 and 319 ppbv (relative to 1 atm) in 0.2 atm SiH4 and 0.37 atm PH3.
机译:已经开发了连续波腔衰荡(cw-CRD)光谱仪,用于通过吸收光谱法在1358nm和1392nm附近的波长下测量痕量水蒸气。数据采集​​的速度和选择性使腔衰荡光谱技术比现有技术更有用,因为该技术可用于测量工艺气体和用于半导体制造的真空环境中的痕量水,在这些环境中水蒸气污染会对最终产品产生不利影响。熔池气体N 2 ,空气和Ar以及半导体工艺气体SiH 4 ,PH 3 和CF的压力扩展系数(γ)在H的2ν 1 和ν 1 3 谱带中确定一系列吸收线的 4 2 O。对于所研究的转变,样气中水蒸气的浓度从1.7×10 12 到2.9×10 15 分子cm -3 在N 2 中以总压力<10 mbar进行混合,并与压力升高至约200 mbar的浴槽气体混合。 γ的值量化了随着浴气压的峰值吸收截面的减小,因此,它们对水蒸气的检测极限的影响。对于振铃时间为τ= 12.0μs,精度为0.6%的CRD光谱仪,在1 atm N 2 和CF 4中测量水蒸气的检测极限分别估计为18和14 ppbv。 SiH 4 和PH 3 在1.3μm波长区域内的竞争吸收导致在0.2 atm下分别检测98和319 ppbv(相对于1 atm)的水蒸气的检测极限SiH 4 和0.37 atm PH 3

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    《Applied Spectroscopy》 |2008年第12期|1354-1362|共9页
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