Photovoltaic Conversion of Energy Based on the Bulk Photovoltaic Effect in Inhomogeneous Semiconductors

摘要

The design and theory of a new type of homogeneous photoconverters based on the bulk photovoltaic effect in inhomogeneously doped semiconductors have been developed. A theory of the bulk effect in the photoconverter base region within the uniform built-in electric field model has been worked out. An expression for the volt-ampere characteristic and effective resistance of the base under exposure to uniform monochromatic light in the linear photoresponse approximation has been obtained. The prospects of raising the photoconverter efficiency by creating an inhomogeneous structure with the bulk photo e.m.f. have been outlined.