Temperature Behavior of Photovoltaic Characteristics of Amorphous Silicon Solar Cells

摘要

The formulas determining the photogalvanic characteristics of the solar cells prepared based on hydrated silicon, a-Si:H, as functions of temperature, imperfection coefficient, and potential barrier height were obtained. It was shown that the no-load voltage curve has a maximum at low temperatures, and this maximum shifted with the potential barrier height. It was determined that the short-circuit current depends considerably on the imperfection coefficient for J_(sc) > > J_0.