Possibility of Development of Temperature-Stimulated Self-Organization Processes in Photocell Materials

摘要

The possibility of development of self-organization processes in semiconductors and the photocell base due to an exponential increase of the vacancy concentration with temperature and subsequent formation of defect-impurity complexes of the impurity + vacancy type is shown. The formation of these complexes reduces the concentration of efficient recombination centers and the recombination rate as the excitation level increases; this, in turn, determines the development of the self-organization processes in the material and, particularly, the formation of a spatially nonuniform periodic distribution of the nonequilibrium carrier concentration.