Wide-Gapp-n Structure with Intermediate Narrow Band Layer: A Basis for Thermo voltaic Elements with Cascade Transition of Electrons and Holes

摘要

A thermovoltaic element with a cascade transition of electrons and holes based on a wide-gap p-n structure with an intermediate narrow-gap layer that forms heterojunctions is proposed. The action, materials, and maximum effectiveness of thermovoltaic elements with the cascade transition of carriers, and questions regarding the direction of research in the field are discussed.