Silicon-Based Photocells of Enhanced Spectral Sensitivity with Nano-Sized Graded Band Gap Structures

摘要

Photoelectric properties of monocrystalline silicon with multiply charged nanoclusters are studied that generate "silicon clusters," i.e., nano-sized graded band gap structures. Multiply charged nanoclusters of manganese atoms strongly influence the photoelectric properties of monocrystalline silicon and expand the range of spectral sensitivity up to 8 p; the photoelectric sensitivity reaches ~109. Conditions occur for the emergence of photo-emf in such a material in the infrared region when hv＜ E_g. The obtained experimental data expand the functional capabilities for the application of silicon with multiply charged impurity atoms.