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首页> 外文期刊>Applied Physics >Physical properties of photo assisted chemically synthesized Cu-doped tin sulphide porous thin films
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Physical properties of photo assisted chemically synthesized Cu-doped tin sulphide porous thin films

机译:光照辅助化学合成的Cu掺杂硫代磷多孔薄膜的物理性质

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摘要

Undoped and Cu-doped films exhibited hexagonal SnS_2 structure with different preferred orientations. The doped films cover almost all the surface uniformly with agglomerated bigger crystallites. As prepared films were highly resistive and became conducting on doping. Both films were found to be Sn-rich and the doped films confirmed the presence of copper through EDAX analyzer. There was a considerable redshift in the absorption threshold from the bulk for Cu-doped SnS_2 thin films. All the films were highly reflecting in the infrared region and the reflectivity of the films decreased with doping concentration. Conducting tin sulphide nanostructures are highly applicable in dye sensitized solar cells.
机译:未掺杂的和Cu掺杂的薄膜具有具有不同优选取向的六边形SNS_2结构。掺杂的薄膜几乎均匀地覆盖着附聚的更大微晶的所有表面。由于制备的薄膜具有高电阻,并且变成掺杂。发现这两种薄膜都是富含Sn的,并且掺杂的薄膜通过edax分析仪确认存在铜。对于Cu-掺杂的SnS_2薄膜的块状,在吸收阈值中存在相当大的红移。所有薄膜在红外区域中高度反射,并且薄膜的反射率随掺杂浓度降低。进行硫化锡纳米结构在染料中高度适用于染料敏化太阳能电池。

著录项

  • 来源
    《Applied Physics》 |2021年第1期|57.1-57.9|共9页
  • 作者单位

    Department of Physics S.E.S. College Sreekandapurara Sreekandapuram Kannur 670631 Kerala India;

    Department of Physics P.R.N.S.S. College Mattannur Mattanur Kannur 670702 Kerala India;

    School of Pure and Applied Physics Kannur University Kannur Kerala India;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Conductivity; Tinsulphide; Thin films; Nanostructures; XRD; UV;

    机译:电导率;硫化锡;薄膜;纳米结构;XRD;紫外线;

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