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首页> 外文期刊>Applied Physics >Effect of MgO doping on densification and grain growth behavior of Gd_2Zr_2O_7 ceramics by microwave sintering process
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Effect of MgO doping on densification and grain growth behavior of Gd_2Zr_2O_7 ceramics by microwave sintering process

机译:MgO掺杂对微波烧结Gd_2Zr_2O_7陶瓷致密化和晶粒长大行为的影响

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摘要

In our study, the effect of MgO doping on the densification and grain growth in gadolinium zirconate (Gd2Zr2O7) during microwave sintering was reported, and the nanocrystalline Gd2Zr2O7 and Mg-doped Gd2Zr2O7 raw powders used for shaping and sintering were synthesized by a novel co-precipitation assisted solvothermal method. The results indicate that the increase in density is always accompanied by grain size growth with different degrees at different sintering temperatures (1200 degrees C, 1250 degrees C, and 1300 degrees C). The relative density increased rapidly along with the prompt grain growth at 1300 degrees C. However, when sintered at 1200 degrees C and 1250 degrees C, the grain size increased slowly, while the density increased remarkably with the further addition of MgO. Gd2Zr2O7 ceramics with high density (95%) and relatively small grain size (106nm) were fabricated at a MgO-doping amount of 2 at% and sintering temperature at 1250 degrees C. MgO was proved as an effective sintering additive for Gd2Zr2O7 which can significantly promote the densification process and also can furtherly reduce the densification temperature.
机译:在我们的研究中,报道了微波烧结过程中MgO掺杂对锆酸g(Gd2Zr2O7)的致密化和晶粒生长的影响,并通过新颖的共晶合成了用于成型和烧结的纳米晶Gd2Zr2O7和掺杂Mg的Gd2Zr2O7原始粉末。沉淀辅助溶剂热法。结果表明,密度的增加总是伴随着在不同的烧结温度(1200摄氏度,1250摄氏度和1300摄氏度)下不同程度的晶粒尺寸增长。相对密度随着在1300摄氏度下迅速的晶粒生长而迅速增加。但是,当在1200摄氏度和1250摄氏度下烧结时,晶粒尺寸缓慢增加,而随着进一步添加MgO,密度显着增加。以2at%的MgO掺杂量和1250摄氏度的烧结温度制备具有高密度(95%)和相对较小的晶粒尺寸(106nm)的Gd2Zr2O7陶瓷。事实证明,MgO是有效的Gd2Zr2O7烧结添加剂。促进了致密化过程,还可以进一步降低致密化温度。

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  • 来源
    《Applied Physics》 |2019年第8期|556.1-556.7|共7页
  • 作者单位

    Sichuan Univ, Coll Phys, Chengdu 610064, Sichuan, Peoples R China|Sichuan Univ, Key Lab Radiat Phys & Technol, Minist Educ, Chengdu 610064, Sichuan, Peoples R China;

    Sichuan Univ, Coll Phys, Chengdu 610064, Sichuan, Peoples R China|Sichuan Univ, Key Lab Radiat Phys & Technol, Minist Educ, Chengdu 610064, Sichuan, Peoples R China;

    Sichuan Univ, Coll Phys, Chengdu 610064, Sichuan, Peoples R China|Sichuan Univ, Key Lab Radiat Phys & Technol, Minist Educ, Chengdu 610064, Sichuan, Peoples R China;

    Sichuan Univ, Coll Phys, Chengdu 610064, Sichuan, Peoples R China|Sichuan Univ, Key Lab Radiat Phys & Technol, Minist Educ, Chengdu 610064, Sichuan, Peoples R China|Sichuan Univ, Key Lab High Energy Dens Phys, Minist Educ, Chengdu 610064, Sichuan, Peoples R China;

    Sichuan Univ, Coll Phys, Chengdu 610064, Sichuan, Peoples R China|Sichuan Univ, Key Lab Radiat Phys & Technol, Minist Educ, Chengdu 610064, Sichuan, Peoples R China|Sichuan Univ, Key Lab High Energy Dens Phys, Minist Educ, Chengdu 610064, Sichuan, Peoples R China;

    Sichuan Univ, Coll Phys, Chengdu 610064, Sichuan, Peoples R China|Sichuan Univ, Key Lab Radiat Phys & Technol, Minist Educ, Chengdu 610064, Sichuan, Peoples R China;

    Sichuan Univ, Coll Phys, Chengdu 610064, Sichuan, Peoples R China|Sichuan Univ, Key Lab Radiat Phys & Technol, Minist Educ, Chengdu 610064, Sichuan, Peoples R China|Sichuan Univ, Key Lab High Energy Dens Phys, Minist Educ, Chengdu 610064, Sichuan, Peoples R China;

    Sichuan Univ, Coll Phys, Chengdu 610064, Sichuan, Peoples R China|Sichuan Univ, Key Lab Radiat Phys & Technol, Minist Educ, Chengdu 610064, Sichuan, Peoples R China;

    Sichuan Univ, Coll Phys, Chengdu 610064, Sichuan, Peoples R China|Sichuan Univ, Key Lab Radiat Phys & Technol, Minist Educ, Chengdu 610064, Sichuan, Peoples R China|Sichuan Univ, Key Lab High Energy Dens Phys, Minist Educ, Chengdu 610064, Sichuan, Peoples R China;

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