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Magnetostriction theory of ultrathin freestanding nanofilms

机译:超薄独立纳米膜的磁致伸缩理论

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摘要

In this paper, a continuum theory for describing the magnetostrictive behavior of magnetic nanofilms is proposed. Surface effects (including surface elastic and surface magnetoelastic effects) as well as symmetry lowering of nanofilms are considered in the theoretical scheme. The spherical symmetry is lowered to the cylindrical one in nearly two-dimensional nanofilms. And then, there are some additional new elastic and magnetoelastic parameters induced by symmetry lowering have to be reckoned into model the magnetostriction of nanofilms rigorously. The application of our theoretical scheme to Fe nanofilms shows good agreement with experiment. The magnetostriction minimum vs film thickness of Fe nanofilms was produced straightforwardly. In addition, the surface elastic and surface magnetoelastic constants are physically reasonable and consistent with most solid surfaces (on the order of 1-10J/m(-2) for surface elasticity and 10(-2)-10(-4)J/m(-2) for surface magnetoelasticity). This fact confirms the great importance of additional new elastic and magnetoelastic parameters in magnetostriction theory of magnetic nanofilms. The relationship ((x)=-2(y)=-2(z)) between magnetostrictions breaks down for nanofilms. In addition, when the magnetic field is applied along vertical direction, the magnetostriction of nanofilms behaves different from the case that magnetic field is applied along in-plane direction.
机译:本文提出了一种描述磁性纳米薄膜磁致伸缩行为的连续理论。理论方案考虑了表面效应(包括表面弹性和表面磁弹性效应)以及纳米膜的对称性降低。在接近二维的纳米薄膜中,球形对称性降低到圆柱形。然后,由于对称性降低引起的一些新的弹性和磁弹性参数必须被严格地模拟成纳米薄膜的磁致伸缩。我们的理论方案在铁纳米膜上的应用与实验吻合良好。 Fe纳米膜的磁致伸缩最小值与膜厚度的关系直接产生。另外,表面弹性和表面磁弹性常数在物理上是合理的,并且与大多数固体表面一致(表面弹性的数量级为1-10J / m(-2),而10(-2)-10(-4)J / m(-2)用于表面磁弹性)。这一事实证实了在磁性纳米膜的磁致伸缩理论中附加的新的弹性和磁弹性参数的重要性。对于纳米膜,磁致伸缩之间的关系((x)=-2(y)=-2(z))分解。另外,当沿垂直方向施加磁场时,纳米膜的磁致伸缩的行为不同于沿平面内方向施加磁场的情况。

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  • 来源
    《Applied Physics》 |2019年第4期|246.1-246.8|共8页
  • 作者单位

    Shanxi Datong Univ, Shanxi Prov Key Lab Microstruct Electromagnet Fun, Sch Phys & Elect Sci, Datong 037009, Peoples R China;

    Inner Mongolia Normal Univ, Inner Mongolia Key Lab Phys & Chem Funct Mat, Coll Phys & Elect Informat, Hohhot 010022, Peoples R China;

    Inner Mongolia Normal Univ, Inner Mongolia Key Lab Phys & Chem Funct Mat, Coll Phys & Elect Informat, Hohhot 010022, Peoples R China|Inner Mongolia Univ, Inner Mongolia Key Lab Nanosci & Nanotechnol, Sch Phys Sci & Technol, Hohhot 010021, Peoples R China;

    Shanxi Datong Univ, Comm Communist Youth League, Datong 037009, Peoples R China;

    Shanxi Datong Univ, Shanxi Prov Key Lab Microstruct Electromagnet Fun, Sch Phys & Elect Sci, Datong 037009, Peoples R China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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