Long Si nanowires with millimeter-scale length by modified thermal evaporation from Si powder

摘要

A modified thermal evaporation processing is reported to fabricate silicon nanowires starting from Si powder under normal pressure. In a temperature range of 1250-1290 ℃, long single-crystal Si nanowires with an amorphous layer were grown in relative large quantity, and they had a millimeter-scale length and a uniform diameter of about 100 nm. A high-resolution transmission electron microscopy image indicated that the growing direction of the long Si nanowires is [111].