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首页> 外文期刊>Applied Physics A: Materials Science & Processing >Microstructure and electrical conductivity of YSZ thin films prepared by pulsed laser deposition
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Microstructure and electrical conductivity of YSZ thin films prepared by pulsed laser deposition

机译:脉冲激光沉积制备YSZ薄膜的微观结构和导电性

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摘要

Yttria-stabilized zirconia (YSZ) is the most common solid electrolyte material used e.g. in ceramic fuel cells. Thin films of YSZ were deposited on c-cut sapphire single crystals by pulsed laser deposition using a KrF excimer laser focused on a polycrystalline 8 mol% Y_2O_3-stabilized ZrO_2 target. Depending on the substrate temperature and the oxygen background pressure during deposition, different mi-crostructures are obtained. XRD and high-resolution SEM revealed the formation of dense amorphous films at room temperature. At 600℃ preferentially (111) oriented polycrystalline films consisting of densely agglomerated nm-sized grains of the cubic phase resulted. Grain size and surface roughness could be controlled by varying the oxygen background pressure. RBS and PIXE evidenced congruent transfer only for a low number of pulses, indicating a dynamical change of the target stoichiometry during laser irradiation. The in-plane ionic conductivity of the as-deposited crystalline films was comparable to bulk YSZ. The conductivity of initially amorphous YSZ passes a maximum during the crystallization process. However, the relative changes remain small, i.e. no significant enhancement of ionic conductivity related to the formation of a nanocrystalline microstructure is found.
机译:氧化钇稳定的氧化锆(YSZ)是最常用的固体电解质材料,例如在陶瓷燃料电池中。通过使用聚焦在多晶8摩尔%Y_2O_3稳定的ZrO_2靶上的KrF准分子激光,通过脉冲激光沉积将YSZ薄膜沉积在c形切割蓝宝石单晶上。根据沉积过程中的基板温度和氧气本底压力,可获得不同的微观结构。 XRD和高分辨率SEM揭示了在室温下形成致密的非晶膜。在600℃时,优先得到(111)取向的多晶膜,该膜由致密团聚的立方相纳米级晶粒组成。晶粒尺寸和表面粗糙度可以通过改变氧气本底压力来控制。 RBS和PIXE仅在少量脉冲时证明了一致的转移,这表明在激光辐照期间目标化学计量的动态变化。所沉积的结晶膜的面内离子电导率可与体YSZ相比。最初的非晶态YSZ的电导率在结晶过程中达到最大值。但是,相对变化仍然很小,即未发现与形成纳米晶体微结构有关的离子电导率显着提高。

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