Temperature and injection current dependent electroluminescence study of GalnP/AlGalnP quantum well laser diode grown using tertiarybutylarsine and tertiarybutylphosphine

C.Y. LIU; S.F. YOON; J.H. TENG; J.R. DONG; S.J. CHUA

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Temperature and injection current dependent electroluminescence study of GalnP/AlGalnP quantum well laser diode grown using tertiarybutylarsine and tertiarybutylphosphine

机译：叔丁基ar和叔丁基膦生长的GalnP / AlGalnP量子阱激光二极管的温度和注入电流依赖性电致发光研究

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GaInP/AlGaInP triple quantum well (TQW) lasers, grown by metalorganic chemical vapor deposition (MOCVD) using tertiarybutylarsine (TBAs) and tertiarybutylphosphine (TBP), were fabricated with a pulsed anodic oxidation (PAO) process. The devices worked at

机译：GaInP / AlGaInP三量子阱（TQW）激光器是通过使用脉冲阳极氧化（PAO）工艺通过金属有机化学气相沉积（MOCVD）使用叔丁基ar（TBA）和叔丁基膦（TBP）制成的。这些设备在

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来源
《Applied Physics A: Materials Science & Processing 》 |2008年第3期| 435-439| 共5页
作者
C.Y. LIU; S.F. YOON; J.H. TENG; J.R. DONG; S.J. CHUA;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类
关键词
electroluminescence; semiconductor compounds; quantum wells; chemical vapor deposition (including plasma-enhanced CVD, MOCVD, etc.); semiconductor lasers; laser diodes;

机译：电致发光半导体化合物量子阱化学气相沉积（包括等离子体增强CVD;MOCVD等）;半导体激光器;激光二极管;

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专利

1. Low threshold 1.5 mu m quantum well lasers grown by atmospheric pressure MOCVD with tertiarybutylarsine (TBA) and tertiarybutylphosphine (TBP) [J] . Heimbuch M.E., Holmes A.L. Jr. Electronics Letters . 1993 ,第4期

机译：大气压MOCVD用叔丁基ar（TBA）和叔丁基膦（TBP）生长的低阈值1.5μm量子阱激光器
2. Optimisation of pulsed anodic oxidation for the fabrication of AlGaInP laser diodes grown with tertiarybutylarsine and tertiarybutylphosphine [J] . C.Y. Liu, S.F. Yoon, S.Z. Wang, IEE Proceedings. Part J, Optoelectronics . 2005 ,第4期

机译：优化用于制备由叔丁基ar和叔丁基膦生长的AlGaInP激光二极管的脉冲阳极氧化
3. Optimisation of pulsed anodic oxidation for the fabrication of AlGaInP laser diodes grown with tertiarybutylarsine and tertiarybutylphosphine [J] . C.Y. Liu, S.F. Yoon, S.Z. Wang, IEE Proceedings. Part J, Optoelectronics . 2005 ,第4期

机译：优化用于制备由叔丁基ar和叔丁基膦生长的AlGaInP激光二极管的脉冲阳极氧化
4. Compressively strained 1.55-um InxGa1-xAsyP1-y/InP quantum well laser diodes grown by MOCVD with tertiarybutylarsine (TBA) and tertiarybutylphosphine (TBP) [C] . Steve P. DenBaars, Univ. of California/Santa Barbara, Santa Barbara, Laser Diode Technology and Applications VI . 1994

机译：用叔丁基grown（TBA）和叔丁基膦（TBP）通过MOCVD生长的压应变1.55um InxGa1-xAsyP1-y / InP量子阱激光二极管
5. Optimization of MOCVD growth using tertiarybutylarsine and tertiarybutylphosphine for the realization of 1.55 micrometer low threshold current lasers [D] . Heimbuch, Mark Eugene. 1997

机译：使用叔丁基ar和叔丁基膦优化MOCVD生长以实现1.55微米低阈值电流激光器
6. Room-temperature continuous-wave electrically pumped InGaN/GaN quantum well blue laser diode directly grown on Si [O] . Yi Sun, Kun Zhou, Meixin Feng, 2018

机译：直接在Si上生长的室温连续波电泵浦InGaN / GaN量子阱蓝色激光二极管
7. Temperature-dependent photoluminescence of GaInP/AlGaInP multiple quantum well laser structure grown by metalorganic chemical vapor deposition with tertiarybutylarsine and tertiarybutylphosphine [O] . Liu CY, Yuan S, Dong JR, 2003

机译：用叔丁基胂和叔丁基膦的金属有机化学气相沉积法生长GaInp / alGaInp多量子阱激光器结构的温度依赖性光致发光
8. Calculated Room-Temperature Threshold Current Densities for the Visible II-VIZnCdSe/ZnSe Quantum-Well Diode Lasers. (Reannouncement with New Availability Information) [R] . Aggarwal, R. L., Zayhowski, J. J., Lax, B. 1993

机译：计算可见II-VIZnCdse / Znse量子阱二极管激光器的室温阈值电流密度。（重新公布新的可用性信息）

Temperature and injection current dependent electroluminescence study of GalnP/AlGalnP quantum well laser diode grown using tertiarybutylarsine and tertiarybutylphosphine

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