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首页> 外文期刊>Applied Physics A: Materials Science & Processing >Three-dimensional SiO_2 surface structures fabricated using femtosecond laser lithography
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Three-dimensional SiO_2 surface structures fabricated using femtosecond laser lithography

机译:飞秒激光光刻技术制作三维SiO_2表面结构

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We report the fabrication of three-dimensional (3-D) SiO_2 surfaces using femtosecond-laser lithography-assisted micromachining, which is a combined process of nonlinear lithography and plasma etching. Using pattern transfer of photoresist structures written by femtosecond laser-induced nonlinear absorption, SiO_2-based Fresnel lens arrays with 3-D surfaces were obtained for this study. Using the open-aperture z-scan method, the femtosecond laser two-photon absorption coefficient of the KMPR resist was estimated as 17-23 cm/TW, assuming that single-photon absorption was negligible. By adding O_2 to the etching gas (CHF_3) during pattern transfer, the surface roughness of the transferred structures was reduced to RMS 16.90 nm, which corresponds to one quarter of that without adding O_2. When 632.8-nm-wavelength light was coupled to the lenses with 3-D surfaces, the focal length was measured as 2790 μm, which agreed well with the theoretical value.
机译:我们报告使用飞秒激光光刻辅助的微加工制造三维(3-D)SiO_2表面,这是非线性光刻和等离子蚀刻的组合过程。使用飞秒激光诱导的非线性吸收写入的光致抗蚀剂结构的图案转移,获得了具有3-D表面的SiO_2基菲涅耳透镜阵列。使用开孔z扫描方法,假设单光子吸收可以忽略不计,飞秒激光的KMPR抗蚀剂双光子吸收系数估计为17-23 cm / TW。通过在图案转移期间将O_2添加到蚀刻气体(CHF_3)中,转移的结构的表面粗糙度降低到RMS 16.90 nm,相当于不添加O_2的四分之一。当将632.8 nm波长的光耦合到具有3D表面的透镜时,测得的焦距为2790μm,与理论值非常吻合。

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