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首页> 外文期刊>Applied Physics A: Materials Science & Processing >Three-dimensional SiO2 surface structures fabricated using femtosecond laser lithography
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Three-dimensional SiO2 surface structures fabricated using femtosecond laser lithography

机译:飞秒激光光刻技术制作的三维SiO 2 三维表面结构

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摘要

We report the fabrication of three-dimensional (3-D) SiO2 surfaces using femtosecond-laser lithography-assisted micromachining, which is a combined process of nonlinear lithography and plasma etching. Using pattern transfer of photoresist structures written by femtosecond laser-induced nonlinear absorption, SiO2-based Fresnel lens arrays with 3-D surfaces were obtained for this study. Using the open-aperture z-scan method, the femtosecond laser two-photon absorption coefficient of the KMPR resist was estimated as 17–23 cm/TW, assuming that single-photon absorption was negligible. By adding O2 to the etching gas (CHF3) during pattern transfer, the surface roughness of the transferred structures was reduced to RMS 16.90 nm, which corresponds to one quarter of that without adding O2. When 632.8-nm-wavelength light was coupled to the lenses with 3-D surfaces, the focal length was measured as 2790 μm, which agreed well with the theoretical value. PACS 85.40.Hp - 85.85.+j - 81.16.Nd - 42.62.Cf - 42.82.Cr
机译:我们报道了使用飞秒激光光刻辅助的微加工制造三维(3-D)SiO 2 表面的过程,这是非线性光刻和等离子蚀刻的组合过程。利用飞秒激光诱导的非线性吸收写入的光致抗蚀剂结构的图案转移,获得了具有3D表面的SiO 2 菲涅尔透镜阵列。使用开孔z扫描方法,假设单光子吸收可以忽略不计,飞秒激光的KMPR抗蚀剂的两光子吸收系数估计为17-23 cm / TW。通过在图案转移过程中将O 2 添加到蚀刻气体(CHF 3 )中,转移结构的表面粗糙度降低到RMS 16.90 nm,相当于四分之一的RMS。而不添加O 2 。当将632.8 nm波长的光耦合到具有3D表面的透镜时,测得的焦距为2790μm,与理论值非常吻合。 PACS 85.40.Hp-85.85。+ j-81.16.Nd-42.62.Cf-42.82.Cr

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