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Transparent conducting hybrid thin films fabricated by layer-by-layer assembly of single-wall carbon nanotubes and conducting polymers

机译:通过单壁碳纳米管和导电聚合物的逐层组装制备的透明导电杂化薄膜

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摘要

The effect of conducting polymers on the performance of transparent conducting SWNT thin films fabricated by the layer-by-layer (LBL) assembly has been investigated. Transparent conducting SWNT thin films were fabricated by the LBL assembly in two ways, one using conducting polymers, PEDOT-PEG, and the other using nonconducting polymers, PAH, and their electrical and optical properties were compared. The sheet resistance of (PSS-SWNT/PEDOT-PEG)_n films is more than thrice lower than that of (PSS-SWNT/PAH)_n films for the same n while the decrease of optical transmittance due to the absorbance of PEDOT-PEG is fairly small (ca. 2 % at n = 30). The conductivity ratio of the (PSS-SWNT/PEDOT-PEG)_(30) is 3.3 times larger than that of the (PSS-SWNT/PAH)_(30). These figures indicate that the performance of the transparent conducting SWNT thin films fabricated by the LBL assembly is highly improved by using conducting polymers instead of non-conducting ones.
机译:已经研究了导电聚合物对通过逐层(LBL)组件制造的透明导电SWNT薄膜的性能的影响。通过LBL组件以两种方式制造透明的导电SWNT薄膜,一种使用导电聚合物PEDOT-PEG,另一种使用非导电聚合物PAH,并比较了它们的电学和光学性能。对于相同的n,(PSS-SWNT / PEDOT-PEG)_n薄膜的薄层电阻比(PSS-SWNT / PAH)_n薄膜的薄层电阻低三倍以上,而由于PEDOT-PEG的吸光度导致光透射率降低很小(在n = 30时约为2%)。 (PSS-SWNT / PEDOT-PEG)_(30)的电导率比(PSS-SWNT / PAH)_(30)的电导率大3.3倍。这些图表明,通过使用导电聚合物而不是非导电聚合物,可以大大提高由LBL组件制造的透明导电SWNT薄膜的性能。

著录项

  • 来源
    《Applied Physics》 |2012年第2期|p.305-311|共7页
  • 作者单位

    Department of Nuclear and Quantum Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701,Republic of Korea;

    Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Republic of Korea;

    Department of Nuclear and Quantum Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701,Republic of Korea;

    Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Republic of Korea;

    Department of Nuclear and Quantum Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701,Republic of Korea;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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