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首页> 外文期刊>Applied Physics >A photodiode with high rectification ratio based on well-aligned ZnO nanowire arrays and regioregular poly(3-hexylthiophene-2,5-diyl) hybrid heterojunction
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A photodiode with high rectification ratio based on well-aligned ZnO nanowire arrays and regioregular poly(3-hexylthiophene-2,5-diyl) hybrid heterojunction

机译：基于良好排列的ZnO纳米线阵列和区域规则的聚（3-己基噻吩-2,5-二基）杂化异质结的高整流比光电二极管

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摘要

A photodiode was fabricated based on well-aligned ZnO nanowire arrays (ZNAs) and regioregular poly(3-hexylthiophene-2,5-diyl) (P3HT) hybrid heterojunction. The current-voltage (I-V) characteristics of ITO/ ZNAs/P3HT/Ag device in the dark and under illumination with a solar simulator were investigated in detail. The results demonstrated that the device showed good diode characteristics in the dark and under illumination. The device exhibited a high rectification ratio (RR) of 3211 at 2 V and a low turn-on voltage of 0.5 V in the dark. Also, the RR of the device as a function of illumination intensity was observed, and the transportation process of charge carriers in the diode under illumination was illuminated in terms of energy band diagram.
机译：基于良好排列的ZnO纳米线阵列（ZNA）和区域规则的聚（3-己基噻吩-2,5-二基）（P3HT）杂化异质结制造光电二极管。详细研究了ITO / ZNAs / P3HT / Ag器件在黑暗和阳光照射下的电流-电压（I-V）特性。结果表明，该器件在黑暗和光照下均显示出良好的二极管特性。该器件在2 V时显示出3211的高整流比（RR），在黑暗中显示出0.5 V的低导通电压。此外，观察到了器件的RR与照明强度的关系，并根据能带图阐明了照明下二极管中电荷载流子的传输过程。

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  • 来源
    《Applied Physics 》 |2012年第3期| p.511-515| 共5页
  • 作者

    Zhaolin Yuan; Junsheng Yu; Wenming Ma; Yadong Jiang;

  • 作者单位

    State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, P.R.China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, P.R.China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, P.R.China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, P.R.China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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