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首页> 外文期刊>Applied Physics >Marigold-like Cu_(x(x=1.81,2))S nanocrystals: controllable synthesis, field emission, and photocatalytic properties
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Marigold-like Cu_(x(x=1.81,2))S nanocrystals: controllable synthesis, field emission, and photocatalytic properties

机译:万寿菊样Cu_(x(x = 1.81,2))S纳米晶体:可控合成,场发射和光催化性能。

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摘要

Cubic marigold-like Cu_2S nanostructures were synthesized from a facile hydrothermal process without using any additives or surfactants. After thermal annealed at different condition, monoclinic Cu_2S and tetragonal Cu_(1.81)S nanostructures were obtained for the first time, maintaining the marigold-like morphology undestroyed. Field emission (FE) properties of these three types of nanostructures were investigated for the first time. The results indicated that the tetragonal Cu_(1.81)S nanostructures had excellent field emission performance with turn-on field of ~2.1 V/μm and threshold field of ~5.2 V/μm. Moreover, their photocatalytic properties of the three nanostructures were also investigated by photodegradating methylene blue (MB). The results showed that the tetragonal Cu_(1.81)S nanostructures may be a competitive material in both field emission and photo-catalytic applications.
机译:立方万寿菊状的Cu_2S纳米结构是由不需任何添加剂或表面活性剂的简便水热法合成的。在不同条件下进行热退火后,首次获得单斜晶Cu_2S和四方晶Cu_(1.81)S纳米结构,保持了万寿菊样形态。首次研究了这三种类型的纳米结构的场发射(FE)特性。结果表明,四方Cu_(1.81)S纳米结构具有良好的场发射性能,其开启场为〜2.1 V /μm,阈值场为〜5.2 V /μm。此外,还通过光降解亚甲基蓝(MB)研究了它们对三种纳米结构的光催化性能。结果表明,四方Cu_(1.81)S纳米结构可能是场发射和光催化应用中的竞争材料。

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  • 来源
    《Applied Physics 》 |2014年第3期| 801-808| 共8页
  • 作者单位

    Key Laboratory of Polar Materials and Devices (Ministry of Education of China), Department of Electronic Engineering, East China Normal University, Shanghai 200241, China,School of Electronics and Information, Nantong University, Nantong 226019, China;

    Key Laboratory of Polar Materials and Devices (Ministry of Education of China), Department of Electronic Engineering, East China Normal University, Shanghai 200241, China;

    Key Laboratory of Polar Materials and Devices (Ministry of Education of China), Department of Electronic Engineering, East China Normal University, Shanghai 200241, China,School of Electronics and Information, Nantong University, Nantong 226019, China;

    Key Laboratory of Polar Materials and Devices (Ministry of Education of China), Department of Electronic Engineering, East China Normal University, Shanghai 200241, China;

    Key Laboratory of Polar Materials and Devices (Ministry of Education of China), Department of Electronic Engineering, East China Normal University, Shanghai 200241, China;

    Key Laboratory of Polar Materials and Devices (Ministry of Education of China), Department of Electronic Engineering, East China Normal University, Shanghai 200241, China;

    Key Laboratory of Polar Materials and Devices (Ministry of Education of China), Department of Electronic Engineering, East China Normal University, Shanghai 200241, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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