...
首页> 外文期刊>Applied Physics >High-performance tandem organic light-emitting diodes based on a buffer-modified p-type planar organic heterojunction as charge generation layer
【24h】

High-performance tandem organic light-emitting diodes based on a buffer-modified p-type planar organic heterojunction as charge generation layer

机译:基于缓冲改性的p / n型平面有机异质结作为电荷产生层的高性能串联有机发光二极管

获取原文
获取原文并翻译 | 示例

摘要

High-performance tandem organic light-emitting diodes (TOLEDs) were realized using a buffer-modified p-type planar organic heterojunction (OHJ) as charge generation layer (CGL) consisting of common organic materials,and the configuration of this p-type CGL was "LiF/N,N'-diphenyl-N,N'-bis(1-napthyl)-1,1 '-biphenyl-4,4'-diamine (NPB)/4,7-diphenyl-l,10-phenanthroline (Bphen)/ molybdenum oxide (MoO_x)".The optimized TOLED exhibited a maximum current efficiency of 77.6 cd/A without any out-coupling techniques,and the efficiency roll-off was greatly improved compared to the single-unit OLED.The working mechanism of the p-type CGL was discussed in detail.It is found that the NPB/Bphen heterojunction generated enough charges under a forward applied voltage and the carrier extraction was a tunneling process.These results could provide a new method to fabricate high-performance TOLEDs.
机译:利用缓冲改性的p / n型平面有机异质结(OHJ)作为由普通有机材料组成的电荷产生层(CGL),实现了高性能串联有机发光二极管(TOLED),并且该p / n型CGL为“ LiF / N,N'-二苯基-N,N'-双(1-萘基)-1,1'-联苯-4,4'-二胺(NPB)/ 4,7-二苯基- l,10-菲咯啉(Bphen)/氧化钼(MoO_x)”。经过优化的TOLED在没有任何耦合技术的情况下的最大电流效率为77.6 cd / A,与单极性硅相比,其效率下降率大大提高。详细讨论了p / n型CGL的工作机理,发现NPB / Bphen异质结在正向施加电压下产生足够的电荷,并且载流子提取是隧穿过程,这些结果可提供制造高性能TOLED的新方法。

著录项

  • 来源
    《Applied Physics 》 |2017年第4期| 234.1-234.7| 共7页
  • 作者单位

    State Key Laboratory on Integrated Optoelectronics,College of Electronics Science and Engineering,Jilin University,2699 Qianjin Street,Changchun 130012,People's Republic of China;

    State Key Laboratory on Integrated Optoelectronics,College of Electronics Science and Engineering,Jilin University,2699 Qianjin Street,Changchun 130012,People's Republic of China;

    State Key Laboratory on Integrated Optoelectronics,College of Electronics Science and Engineering,Jilin University,2699 Qianjin Street,Changchun 130012,People's Republic of China;

    State Key Laboratory on Integrated Optoelectronics,College of Electronics Science and Engineering,Jilin University,2699 Qianjin Street,Changchun 130012,People's Republic of China;

    Department of Mechanical and Electronic Engineering,Liaoning Provincial College of Communications,102 Shenbei Road,Shenbei New District,Shenyang 110122,People's Republic of China;

    State Key Laboratory on Integrated Optoelectronics,College of Electronics Science and Engineering,Jilin University,2699 Qianjin Street,Changchun 130012,People's Republic of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号