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机译:包含负折射率材料的光子异质结构在布拉格间隙内的宽入射角范围内具有与偏振和方向无关的缺陷模式
School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China THz Technical Research Center of Shenzhen University,Shenzhen 518060, China Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Shenzhen 518060, China College of Electronic Science and Technology, Shenzhen University, Shenzhen 518060, China;
rnSchool of Physical Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China;
rnDepartment of Physics, Zhenjiang Watercraft College,Zhenjiang 212003, China;
rnTHz Technical Research Center of Shenzhen University,Shenzhen 518060, China Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Shenzhen 518060, China College of Electronic Science and Technology, Shenzhen University, Shenzhen 518060, China;
rnTHz Technical Research Center of Shenzhen University,Shenzhen 518060, China Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Shenzhen 518060, China College of Electronic Science and Technology, Shenzhen University, Shenzhen 518060, China;
机译:包含负折射率材料的光子异质结构在布拉格间隙内的宽入射角范围内具有与偏振和方向无关的缺陷模式
机译:基于含负折射率材料的Thue-Morse光子异质结构的方向无关的带隙扩展
机译:通过使用包含负折射率材料的光子异质结构扩展零平均折射率间隙
机译:基于含负折射率材料的Thue-Morse光子异质结构的与方向无关的带隙扩展
机译:子带外延生长和宽带隙锌-镁-硒半导体材料及其子结构的异质结构的表征。
机译:具有布拉格间隙和非布拉格间隙的异质结构波导中的单模界面态
机译:在pyrochlore排列中增强由Epsilon负材料构成的三维光子晶体的完全光子带隙