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Doped niobium superconducting nanowire single-photon detectors

机译:掺杂铌超导纳米线单光子探测器

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摘要

We designed and fabricated a special doped niobium (Nb~*) superconducting nanowire single-photon detector (SNSPD) on MgO substrate. The superconductivity of this ultra-thin Nb~* film was further improved by depositing an ultra-thin aluminum nitride protective layer on top. Compared with traditional Nb films, Nb~* films present higher T_C and J_C. We investigated the dependence of the characteristics of devices, such as cut-off wavelength, response bandwidth, and temperature, on their geometrical dimensions. Results indicate that reduction in both the width and thickness of Nb~* nanowires extended the cut-off wavelength and improved the sensitivity. The Nb~* SNSPD (50 nm width and 4.5 nm thickness) exhibited single-photon sensitivities at 1,310, 1,550, and 2,010 nm. We also demonstrated an enhancement in the detection efficiency by a factor of 10 in its count rate by lowering the working temperature from 2.26 K to 315 mK.
机译:我们在MgO衬底上设计并制造了一种特殊的掺杂铌(Nb〜*)超导纳米线单光子探测器(SNSPD)。通过在顶部沉积一层超薄氮化铝保护层,可以进一步改善这种Nb〜*薄膜的超导性。与传统的Nb薄膜相比,Nb〜*薄膜的T_C和J_C更高。我们研究了器件特性(例如截止波长,响应带宽和温度)对其几何尺寸的依赖性。结果表明,Nb〜*纳米线的宽度和厚度的减小延长了截止波长并提高了灵敏度。 Nb〜* SNSPD(50 nm宽度和4.5 nm厚度)在1,310、1,550和2,010 nm处表现出单光子敏感性。通过将工作温度从2.26 K降低到315 mK,我们还证明了检测效率的提高,其计数率提高了10倍。

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  • 来源
    《Applied physics》 |2014年第4期|991-995|共5页
  • 作者单位

    Research Institute of Superconductor Electronics (RISE), Nanjing University, Nanjing 210093, China;

    Research Institute of Superconductor Electronics (RISE), Nanjing University, Nanjing 210093, China;

    Research Institute of Superconductor Electronics (RISE), Nanjing University, Nanjing 210093, China;

    Research Institute of Superconductor Electronics (RISE), Nanjing University, Nanjing 210093, China;

    Research Institute of Superconductor Electronics (RISE), Nanjing University, Nanjing 210093, China;

    Research Institute of Superconductor Electronics (RISE), Nanjing University, Nanjing 210093, China;

    Research Institute of Superconductor Electronics (RISE), Nanjing University, Nanjing 210093, China;

    Research Institute of Superconductor Electronics (RISE), Nanjing University, Nanjing 210093, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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