首页> 外文期刊>Applied Physics A: Materials Science & Processing >Large current peak-to-valley ratio observed in CdSe quantum dot/MEH-PPV based nanocomposite heterostructure
【24h】

Large current peak-to-valley ratio observed in CdSe quantum dot/MEH-PPV based nanocomposite heterostructure

机译:在基于CdSe量子点/ MEH-PPV的纳米复合异质结构中观察到大电流峰谷比

获取原文
获取原文并翻译 | 示例
       

摘要

In this paper, we show negative differential resistance (NDR) in CdSe quantum dot/MEH-PPV based nanocomposite multi-layer heterostructures at room temperature. The four-layer structure exhibited a maximum peak-to-valley ratio of current of 1190 at room temperature, while two-layer structures show a value of 4. Two-, three- and four-layer structures are studied. Each device configuration exhibits different kind of negative differential resistance. The possible mechanism is explained on the basis of tunneling phenomena.
机译:在本文中,我们在室温下基于CdSe量子点/ MEH-PPV的纳米复合多层异质结构显示了负差分电阻(NDR)。在室温下,四层结构的最大峰谷比为1190,而两层结构的最大峰谷比为4。研究了两层,三层和四层结构。每种器件配置都表现出不同种类的负差分电阻。根据隧道现象来解释可能的机制。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号